Scanning electron microscopy of dopant distribution in semiconductors (Articolo in rivista)

Type
Label
  • Scanning electron microscopy of dopant distribution in semiconductors (Articolo in rivista) (literal)
Anno
  • 2005-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.1883708 (literal)
Alternative label
  • Merli P.G., Morandi V., Savini G., Ferroni M., Sberveglieri G. (2005)
    Scanning electron microscopy of dopant distribution in semiconductors
    in Applied physics letters; AIP, American institute of physics, Melville, NY (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Merli P.G., Morandi V., Savini G., Ferroni M., Sberveglieri G. (literal)
Pagina inizio
  • 101916-I (literal)
Pagina fine
  • 101916-III (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 86 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 3 (literal)
Note
  • Scopu (literal)
  • ISI Web of Science (WOS) (literal)
  • Google Scholar (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR, IMM, Sez Bologna, I-40129 Bologna, Italy; Univ Brescia, INFM, Dipartimento Chim & Fis Ingn & Mat, Sensor Lab, I-25133 Brescia, Italy (literal)
Titolo
  • Scanning electron microscopy of dopant distribution in semiconductors (literal)
Abstract
  • We show that, in scanning electron microscopy, it is possible to use the secondary electrons produced by the backscattered electrons to obtain chemical. information on the dopant distribution in Sb-implanted silicon. Theoretical investigations and experimental data concur to point out that the resolution of the method is defined by the probe size-values of 1 nm or even lower are possible in the present instruments-while the contrast depends on the electron range and on the boundary conditions. A proper choice of beam energy and boundaries of the doped layer may allow a sensitivity below 1%, suitable to characterize the high-dose near-surface region of the ultrashallow junctions in cross-sectioned bulk specimens. (literal)
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