http://www.cnr.it/ontology/cnr/individuo/prodotto/ID35498
Reduction of fixed charges in atomic layer deposited Al2O3 dielectrics (Articolo in rivista)
- Type
- Label
- Reduction of fixed charges in atomic layer deposited Al2O3 dielectrics (Articolo in rivista) (literal)
- Anno
- 2005-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/j.mee.2005.04.070 (literal)
- Alternative label
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Buckley J.; De Salvo B.; Deleruyelle D.; Gely M.; Nicotra G.; Lombardo S.; Damlencourt J.F.; Hollinger P.; Martin F.; Deleonibus S. (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
- http://www.sciencedirect.com/science/article/pii/S0167931705002091 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- CEA LETI, F-38054 Grenoble, France; Univ Aix Marseille 1, IMT Technopole Chateau Gombert, L2MP, F-13451 Marseille, France; CNR IMM, I-95121 Catania, Italy (literal)
- Titolo
- Reduction of fixed charges in atomic layer deposited Al2O3 dielectrics (literal)
- Abstract
- In this work we present an original study that shows how to reduce the negative fixed charges of atomic layer deposited Al2O3. The influence of the aluminium oxide growth temperature on this charge is studied here for the first time. The effect of annealing is also considered, and an optimal process is proposed. Relationship with H content is investigated as well. Finally, influences of these charges on the Al2O3 transport properties are analyzed. (literal)
- Prodotto di
- Autore CNR
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