High responsivity GaN-based UV detectors (Articolo in rivista)

Type
Label
  • High responsivity GaN-based UV detectors (Articolo in rivista) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Alternative label
  • Poti B., Todaro M. T., Frassanito M. C., Pomarico A. , Passaseo A., Lomascolo M., Cingolani R. , De Vittorio M. (2003)
    High responsivity GaN-based UV detectors
    in Electronics Letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Poti B., Todaro M. T., Frassanito M. C., Pomarico A. , Passaseo A., Lomascolo M., Cingolani R. , De Vittorio M. (literal)
Pagina inizio
  • 1747 (literal)
Pagina fine
  • 1749 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 39 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Natl Nanotechnol Lab- INFM, CNR- IMM, (literal)
Titolo
  • High responsivity GaN-based UV detectors (literal)
Abstract
  • The high temperature. characterisation of low barrier metal-semiconductor-metal (MSM) GaN-bulk photodetectors is reported. A very high DC responsivity of 6.7 x 10(6) A/W at room temperature and of 1.4 x 10(6) A/W at 450 K was achieved at the wavelength of 325 nm. These values, which are to our knowledge the highest reported in the literature, are in good agreement with our theoretical calculations. (literal)
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