Depth resolved investigations of boron implanted silicon (Articolo in rivista)

Type
Label
  • Depth resolved investigations of boron implanted silicon (Articolo in rivista) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Alternative label
  • Sztucki M., Metzger T.H., Milita S., Berberich F., Schell N., Rouviere J.L., Patel J. (2003)
    Depth resolved investigations of boron implanted silicon
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Sztucki M., Metzger T.H., Milita S., Berberich F., Schell N., Rouviere J.L., Patel J. (literal)
Pagina inizio
  • 52 (literal)
Pagina fine
  • 59 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 200 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Titolo
  • Depth resolved investigations of boron implanted silicon (literal)
Abstract
  • We have studied the depth distribution and structure of defects in boron implanted silicon (0 0 1). Silicon wafers were implanted with a boron dose of 6E15 ions/cm2 at 32 keV and went through different annealing treatments. Using diffuse X-ray scattering at grazing incidence and exit angles we are able to distinguish between different kinds of defects (point defect clusters and extrinsic stacking faults on {1 1 1} planes) and to determine their depth distribution as a function of the thermal budget. Cross-section transmission electron microscopy was used to gain complementary information. In addition we have determined the strain distribution caused by the boron implantation as a function of depth from rocking curve measurements. (literal)
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