Crystallization and phase separation in Ge2+xSb2Te5 thin films (Articolo in rivista)

Type
Label
  • Crystallization and phase separation in Ge2+xSb2Te5 thin films (Articolo in rivista) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Alternative label
  • Privitera S., Rimini E., Bongiorno C., Zonca R., Pirovano A., Bez R. (2003)
    Crystallization and phase separation in Ge2+xSb2Te5 thin films
    in Journal of applied physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Privitera S., Rimini E., Bongiorno C., Zonca R., Pirovano A., Bez R. (literal)
Pagina inizio
  • 4409 (literal)
Pagina fine
  • 4413 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 94 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Univ Catania, Dept Phys & Astron, I-95123 Catania, Italy; CNR, IMM, Sez Catania, I-95121 Catania, Italy; STMicroelect, Cent R&D, I-20041 Agrate Brianza, MI, Italy (literal)
Titolo
  • Crystallization and phase separation in Ge2+xSb2Te5 thin films (literal)
Abstract
  • The electrical properties and the structure of isothermally annealed thin films of Ge2+xSb2Te5 (x=0 and 0.5) have been studied by in situ electrical measurements, x-ray diffraction, and transmission electron microscopy analyses. Phase separation has been observed in samples with an excess of Ge; by annealing amorphous Ge2.5Sb2Te5 films at temperatures in the range 130-160 degreesC, the material cannot be completely converted into the metastable face-centered-cubic (fcc) structure. At temperatures higher than 160 degreesC, the residual amorphous material may be converted into a fcc structure with a lower lattice parameter. (literal)
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