Two-dimensional interstitial diffusion in silicon monitored by scanning capacitance microscopy (Articolo in rivista)

Type
Label
  • Two-dimensional interstitial diffusion in silicon monitored by scanning capacitance microscopy (Articolo in rivista) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/S0921-5107(03)00022-9 (literal)
Alternative label
  • Giannazzo F., Mirabella S., Raineri V., De Salvador D., Napolitani E., Terrasi A., Carnera A., Drigo A.V., Priolo F. (2003)
    Two-dimensional interstitial diffusion in silicon monitored by scanning capacitance microscopy
    in Materials science & engineering. B, Solid-state materials for advanced technology
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Giannazzo F., Mirabella S., Raineri V., De Salvador D., Napolitani E., Terrasi A., Carnera A., Drigo A.V., Priolo F. (literal)
Pagina inizio
  • 148 (literal)
Pagina fine
  • 151 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 102 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR IMM, Sez Catania, I-95121 Catania, Italy Univ Catania, INFM, I-95125 Catania, Italy Univ Catania, Dept Phys, I-95125 Catania, Italy Univ Padua, INFM, I-35131 Padua, Italy Univ Padua, Dipartimento Fis, I-35131 Padua, Italy (literal)
Titolo
  • Two-dimensional interstitial diffusion in silicon monitored by scanning capacitance microscopy (literal)
Abstract
  • Scanning capacitance microscopy (SCM) has been applied to monitor the two-dimensional (2D) diffusion of Si self-interstitials (I). A sub-micron laterally confined source has been generated by Si self-implantation through a sub-micron oxide mask. The structure was grown by molecular beam epitaxy on (0 0 1) Si, with three spikes of B at different depths used as markers for the interstitial concentration. The measured 2D SCM maps have been accurately quantified to 2D carrier concentration profiles, yielding quantitative information on the B diffusion induced by the I flux. The I supersaturation inside the wafer was monitored by the broadening and the consequent peak concentration lowering of the boron spikes. We show that the I depth-penetration strongly depends on the original source lateral size. Moreover, lateral diffusion of I has been observed, being independent of the source size. (literal)
Prodotto di
Autore CNR
Insieme di parole chiave

Incoming links:


Autore CNR di
Prodotto
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
Insieme di parole chiave di
data.CNR.it