Three terminals optoelectronics devices integrated into a silicon waveguide (Articolo in rivista)

Type
Label
  • Three terminals optoelectronics devices integrated into a silicon waveguide (Articolo in rivista) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Alternative label
  • Coppola G., Irace A., Iodice M., Zeni L., Cutolo A., Sarro P.M. (2003)
    Three terminals optoelectronics devices integrated into a silicon waveguide
    in Optics and lasers in engineering
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Coppola G., Irace A., Iodice M., Zeni L., Cutolo A., Sarro P.M. (literal)
Pagina inizio
  • 317 (literal)
Pagina fine
  • 332 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 39 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Department of Electronic Enginnering and Telecommunications, Università di Napoli ‘‘Federico II’’, Via Claudio 21, 80125 Napoli, Italy Istituto di Ricerche Elettromagnetismo e Componenti Elettronici, Via Diocleziano 243, 80125 Napoli, Italy Department of Electronic Enginnering, Seconda Università di Napoli, Aversa, Italy Università del Sannio, Corso Garibaldi, 107 I- 82100 Benevento, Italy DIMES-Delft Institute of Microelectronics and Submicrontechnology, Electronic Components Technology and Materials Group, Feldmannweg, 17, 2660 CD Delft, The Netherlands (literal)
Titolo
  • Three terminals optoelectronics devices integrated into a silicon waveguide (literal)
Abstract
  • In this paper we describe two different kind of optoelectronic devices both based on a three terminals active device and exploit the plasma dispersion effect to achieve the desired working. The first device exploits this effect in order to obtain an optical modulation. The second device is an optoelectronic router based on the mode-mixing principle together with the injection-induced optical phase shift. Both devices are integrated into a Silicon on Silicon optical channel waveguide which can be realized using a standard bipolar process. The possibility of using standard, well-known technology presents several advantages with respect to III-V Optoelectronics. The active three terminal device used is a Bipolar Mode Field Effect Transistor (BMFET). Numerical simulation results are presented on both devices. (literal)
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