Analysis of the effect of the gate oxide breakdown on SRAM stability (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Analysis of the effect of the gate oxide breakdown on SRAM stability (Articolo in rivista) (literal)

Anno

• 2002-01-01T00:00:00+01:00 (literal)

Alternative label

• Rodriguez R., Stathis J.H., Linder B.P., Kowalczyk S., Chuang C.T., Joshi R.V., Northrop G., Bernstein K., Bhavnagarwala A.J., Lombardo S. (2002)
  Analysis of the effect of the gate oxide breakdown on SRAM stability
  in Microelectronics and reliability
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Rodriguez R., Stathis J.H., Linder B.P., Kowalczyk S., Chuang C.T., Joshi R.V., Northrop G., Bernstein K., Bhavnagarwala A.J., Lombardo S. (literal)

Pagina inizio

• 1445 (literal)

Pagina fine

• 1448 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 42 (literal)

Rivista

• Microelectronics and reliability (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Titolo

• Analysis of the effect of the gate oxide breakdown on SRAM stability (literal)

Abstract

• We have investigated the effects of oxide soft breakdown (SBD) on the stability of CMOS 6T SRAM cells. Gate-to-diffusion leakage currents of 20-50 microA at the n-FET source can result in a 50% reduction of noise margin. Breakdown at other locations in the cell may be less deleterious depending on n-FET width. This approach gives targets for tolerable values of leakage caused by gate oxide breakdown. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Microelectronics and reliability (Rivista)