Static and dynamic screening of the polarization fields in nitride nanostructures: a theoretical and experimental study (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Static and dynamic screening of the polarization fields in nitride nanostructures: a theoretical and experimental study (Articolo in rivista) (literal)

Anno

• 2002-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/S0921-4526(01)01386-2 (literal)

Alternative label

• Reale A., Di Carlo A., Lugli P., Traetta G., Lomascolo M., Passaseo A., Cingolani R., Bonfiglio A., Berti M., Napolitani E., Natali M., Sinha S.K., Drigo A.V., Vinattieri A., Colocci M. (2002)
  Static and dynamic screening of the polarization fields in nitride nanostructures: a theoretical and experimental study
  in Physica. B, Condensed matter (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Reale A., Di Carlo A., Lugli P., Traetta G., Lomascolo M., Passaseo A., Cingolani R., Bonfiglio A., Berti M., Napolitani E., Natali M., Sinha S.K., Drigo A.V., Vinattieri A., Colocci M. (literal)

Pagina inizio

• 35 (literal)

Pagina fine

• 38 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 314 (literal)

Rivista

• Physica. B, Condensed matter (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Univ Roma Tor Vergata, Dept Elect Engn, INFM, I-00133 Rome, Italy Univ Lecce, INFM, Dept Innovat Engn, I-73100 Lecce, Italy Univ Cagliari, Dept Elect & Elect Engn, INFM, Cagliari, Italy Univ Paduova, Dept Phys, INFM, I-35131 Padova, Italy INFM, Dept Phys, I-50125 Florence, Italy LENS, I-50125 Florence, Italy (literal)

Titolo

• Static and dynamic screening of the polarization fields in nitride nanostructures: a theoretical and experimental study (literal)

Abstract

• We present a combined theoretical and experimental analysis to describe the interplay between polarization field, charge screening and radiative and non-radiative recombinations in GaN-based nanostructure. The theoretical analysis is obtained by coupling a self-consistent solution of Schrödinger and Poisson equations to determine the electronic states in the nanostructure with a rate equation model to account for time-dependent effects of charge re-arrangement. Experimental results are obtained for high quality GaN–AlGaN multiple quantum wells by means of both CW and time resolved photoluminescence techniques. We demonstrate that PL emission is influenced by charge accumulation in the well, and loss of carriers from the ground level induced by both radiative and non-radiative recombination processes. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• MARCO STEFANO NATALI (Unità di personale interno)
• ADRIANA GRAZIA PASSASEO (Unità di personale interno)
• MAURO LOMASCOLO (Persona)

Incoming links:

Autore CNR di

• ADRIANA GRAZIA PASSASEO (Unità di personale interno)
• MAURO LOMASCOLO (Persona)
• MARCO STEFANO NATALI (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Physica. B, Condensed matter (Rivista)