Towards smooth MWPECVD diamond films: exploring the limits of the hydrogen percentage in Ar/H2/CH4 gas mixture (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Towards smooth MWPECVD diamond films: exploring the limits of the hydrogen percentage in Ar/H2/CH4 gas mixture (Articolo in rivista) (literal)

Anno

• 2012-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.surfcoat.2011.09.065 (literal)

Alternative label

• G. Cicala a, D. Monéger b, D. Cornacchia b, P.Pesce b, V. Magaletti c, G. Perna d, V. Capozzi d, M. Tamborra e (2012)
  Towards smooth MWPECVD diamond films: exploring the limits of the hydrogen percentage in Ar/H2/CH4 gas mixture
  in Surface & coatings technology
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• G. Cicala a, D. Monéger b, D. Cornacchia b, P.Pesce b, V. Magaletti c, G. Perna d, V. Capozzi d, M. Tamborra e (literal)

Pagina inizio

• 152 (literal)

Pagina fine

• 157 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 211 (literal)

Rivista

• Surface & coatings technology (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 6 (literal)

Note

• Scopu (literal)
• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• a CNR-IMIP, Via Amendola 122/D, 70126 Bari, Italy; b Dipartimento di Chimica, University of Bari, Via Orabona 4, 70126 Bari, Italy; c ALTA S.p.A., Via Gherardesca 5, 56121 Ospedaletto (Pisa), Italy; d Dipartimento di Scienze Biomediche, University of Foggia, Viale Pinto, 71100 Foggia, Italy; e CNR-IPCF c/o Dipartimento di Chimica, University of Bari, Via Orabona 4, 70126 Bari, Italy. (literal)

Titolo

• Towards smooth MWPECVD diamond films: exploring the limits of the hydrogen percentage in Ar/H2/CH4 gas mixture (literal)

Abstract

• In Ar-rich Ar-H2-CH4 gas mixture the presence of H2 is found to be beneficial to the plasma stability. On the other hand, too high H2 percentages lead to materials showing a high surface roughness. In the present work, diamond films were grown on p-type Si (100) substrates screening different quantities of H2. The plasma phase and plasma-substrate interface were investigated by in-situ optical emission spectroscopy and pyrometric interferometry to determine the behavior of emitting species and the deposition rates, respectively. The obtained films were characterized by Raman micro-spectroscopy, AFM and SEM techniques. For H2 percentages between 6.3 and 10%, the structure and morphology are characteristic of nanocrystalline films, affording low roughness values when a buffer layer was grown between the diamond coating and the treated silicon surface. (literal)

Prodotto di

• Istituto di Nanotecnologia (NANOTEC) (Istituto)
• Dinamica di Plasmi e Laser-Plasmi (MD.P03.027.001) (Modulo)

Autore CNR

• MICHELA TAMBORRA (Persona)
• GRAZIA CICALA (Unità di personale interno)

Insieme di parole chiave

• Parole chiave di "Towards smooth MWPECVD diamond films: exploring the limits of the hydrogen percentage in Ar/H2/CH4 gas mixture" (Insieme di parole chiave)

Incoming links:

Prodotto

• Istituto di Nanotecnologia (NANOTEC) (Istituto)
• Dinamica di Plasmi e Laser-Plasmi (MD.P03.027.001) (Modulo)

Autore CNR di

• GRAZIA CICALA (Unità di personale interno)
• MICHELA TAMBORRA (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Surface & coatings technology (Rivista)

Insieme di parole chiave di

• Parole chiave di "Towards smooth MWPECVD diamond films: exploring the limits of the hydrogen percentage in Ar/H2/CH4 gas mixture" (Insieme di parole chiave)