Structural, Optical, and Electrical Characterization of ZnO and Al-doped ZnO Thin Films Deposited by MOCVD (Articolo in rivista)

Type
Label
  • Structural, Optical, and Electrical Characterization of ZnO and Al-doped ZnO Thin Films Deposited by MOCVD (Articolo in rivista) (literal)
Anno
  • 2009-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1002/cvde.200906790 (literal)
Alternative label
  • M. E. Fragala`; G. Malandrino; M. M. Giangregorio; M. Losurdo; G. Bruno; S. Lettieri; L. Santamaria Amato; P. Maddalena (2009)
    Structural, Optical, and Electrical Characterization of ZnO and Al-doped ZnO Thin Films Deposited by MOCVD
    in Chemical vapor deposition (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • M. E. Fragala`; G. Malandrino; M. M. Giangregorio; M. Losurdo; G. Bruno; S. Lettieri; L. Santamaria Amato; P. Maddalena (literal)
Pagina inizio
  • 327 (literal)
Pagina fine
  • 333 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 15 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • - M.E. Fragalà: Dipartimento di Scienze Chimiche, Universita` di Catania and INSTM UdR Catania, Viale Andrea Doria,6, 95125 Catania (Italy) - M. M. Giangregorio, M. Losurdo, G. Bruno Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR Via Orabona 4, 70126 Bari (Italy) - S. Lettieri, L. Santamaria Amato, P. Maddalena: CNR-INFM Coherentia and Physical Sciences Department of Napoli ''Federico II'' (literal)
Titolo
  • Structural, Optical, and Electrical Characterization of ZnO and Al-doped ZnO Thin Films Deposited by MOCVD (literal)
Abstract
  • A novel approach is used to deposit transparent Al-doped zinc oxide (AZO) films by metal-organic (MO) CVD using a Zn/Al safe, friendly to use, easily to handle, multimetal, liquid precursor source. Films are highly crystalline, (002) textured, and exhibit good transparency in the visible region (90%). The effects of Al doping on morphological, optical, and electrical performances are scrutinized. Al doping causes an energy gap (Eg) blue shift and a slight decrease in refractive index. Moreover, it favors sizeable changes in grain size and a surface integrity that are responsible for a reduced carrier mobility. Nevertheless, a minimum resistivity value of 5?10ÿ2V cm is obtained for thin (?150 nm) AZO films. Time resolved photoluminescence (TRPL) confirms the high crystal quality of deposited films. All features render present AZO films well suited for transparent conductive oxide (TCO) applications and suggest a great potential for the proposed fabrication method. (literal)
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