Band bending and adsorption/desorption kinetics on N-polar GaN surfaces (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Band bending and adsorption/desorption kinetics on N-polar GaN surfaces (Articolo in rivista) (literal)

Anno

• 2009-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1116/1.3054345 (literal)

Alternative label

• S. Choi; T.H. Kim, P. Wu; A. Brown; H. O. Everitt; M. Losurdo;G. Bruno (2009)
  Band bending and adsorption/desorption kinetics on N-polar GaN surfaces
  in Journal of vacuum science & technology. B, Microelectronics and nanometer structures
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• S. Choi; T.H. Kim, P. Wu; A. Brown; H. O. Everitt; M. Losurdo;G. Bruno (literal)

Pagina inizio

• 107 (literal)

Pagina fine

• 112 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 27 (literal)

Rivista

• Journal of vacuum science & technology. B, Microelectronics and nanometer structures (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Duke Univ, Dept Elect & Comp Engn, Durham, NC 27708 USA Duke Univ, Dept Phys, Durham, NC 27708 USA CNR, Inst Inorgan Methodol & Plasmas, I-70126 Bari, Italy (literal)

Titolo

• Band bending and adsorption/desorption kinetics on N-polar GaN surfaces (literal)

Abstract

• Abstract: Highly reactive N-polar [000-1] GaN surfaces were analyzed using spectroscopic ellipsometry. Following exposure to air, observed changes in the pseudodielectric function near the GaN band edge indicate that surface contamination reduces the band bending. A subsequent Ga adsorption/desorption experiment on pristine N-polar GaN indicates that it contains a mixture of Ga-terminated and N-terminated surfaces. During deposition, Ga adatoms preferentially bond to the dangling bonds on the N-terminated surface: the measured 3.19 eV desorption activation energy equals the Ga-N decomposition energy. Further deposition forms a 1 ML Ga wetting layer whose 2.78 eV desorption activation energy is comparable to the Ga sublimation energy. (literal)

Prodotto di

• Istituto di Nanotecnologia (NANOTEC) (Istituto)
• Plasmi per la Scienza dei Materiali (MD.P03.025.001) (Modulo)

Autore CNR

• MARIA LOSURDO (Unità di personale interno)
• GIOVANNI BRUNO (Unità di personale interno)

Incoming links:

Prodotto

• Istituto di Nanotecnologia (NANOTEC) (Istituto)
• Plasmi per la Scienza dei Materiali (MD.P03.025.001) (Modulo)

Autore CNR di

• GIOVANNI BRUNO (Unità di personale interno)
• MARIA LOSURDO (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of vacuum science & technology. B, Microelectronics and nanometer structures (Rivista)