Comparison of Functionalized III–V Semiconductor Response for Nitric Oxide (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Comparison of Functionalized III–V Semiconductor Response for Nitric Oxide (Articolo in rivista) (literal)

Anno

• 2008-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1166/sl.2008.448 (literal)

Alternative label

• Michael A. Garcia, M. Losurdo, S. D. Wolter, W. V. Lampert, J. Bonaventura, G. Bruno, C. Yi, and A. S. Brown (2008)
  Comparison of Functionalized III–V Semiconductor Response for Nitric Oxide
  in Sensor letters (print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Michael A. Garcia, M. Losurdo, S. D. Wolter, W. V. Lampert, J. Bonaventura, G. Bruno, C. Yi, and A. S. Brown (literal)

Pagina inizio

• 627 (literal)

Pagina fine

• 634 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 6 (literal)

Rivista

• Sensor letters (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Duke Univ, Dept Elect & Comp Engn, Durham, NC 27709 USA [ 2 ] IMIP CNR, Inst Inorgan Methodologies & Plasmas, I-70126 Bari, Italy [ 3 ] INSTM, I-70126 Bari, Italy [ 4 ] US Army, Res Off, Res Triangle Pk, NC 27709 USA [ 5 ] Duke Univ, Med Ctr, Nicholas Sch Environm, Durham, NC 27710 USA (literal)

Titolo

• Comparison of Functionalized III–V Semiconductor Response for Nitric Oxide (literal)

Abstract

• Several III-V materials systems, consisting of InAs, InP, and GaN, were chemically functionalized, characterized, and evaluated for Nitric Oxide (NO) sensor research. The hemin porphyrin has been a particularly successful NO detection functional group for carbon-based material systems for sensors. The unique sensing modalities inherent in an InAs surface accumulation layer and the AlGaN/GaN surface polarization charge coupling motivated enhanced chemical sensor exploration. NO's diverse roles in defense, biological, and environmental fields create interest in the development of responsive and selective solid state sensors. In a controlled gaseous environment, functionalized and pre-functionalized III-V semiconductor materials were probed for changes in resistivity during exposure to varying concentrations of NO, NO2, O-2 and Ar. X-ray photoelectron spectroscopy was used to characterize sample functionalization and analyte influences on the valence band maxima in order to better understand the charge transduction mechanisms. The results of the trials were compared and analyzed for optimization and materials recommendations. (literal)

Prodotto di

• Plasmi per la Scienza dei Materiali (MD.P03.025.001) (Modulo)
• Istituto di Nanotecnologia (NANOTEC) (Istituto)

Autore CNR

• GIOVANNI BRUNO (Unità di personale interno)
• MARIA LOSURDO (Unità di personale interno)

Incoming links:

Prodotto

• Istituto di Nanotecnologia (NANOTEC) (Istituto)
• Plasmi per la Scienza dei Materiali (MD.P03.025.001) (Modulo)

Autore CNR di

• GIOVANNI BRUNO (Unità di personale interno)
• MARIA LOSURDO (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Sensor letters (Rivista)