Correlation between structure and properties of Er2O3 nanocrystalline thin films (Articolo in rivista)

Type
Label
  • Correlation between structure and properties of Er2O3 nanocrystalline thin films (Articolo in rivista) (literal)
Anno
  • 2008-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.jnoncrysol.2007.10.102 (literal)
Alternative label
  • M. M. Giangregorio, A. Sacchetti, M. Losurdo, P. Capezzuto, G. Bruno (2008)
    Correlation between structure and properties of Er2O3 nanocrystalline thin films
    in Journal of non-crystalline solids
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • M. M. Giangregorio, A. Sacchetti, M. Losurdo, P. Capezzuto, G. Bruno (literal)
Pagina inizio
  • 2853 (literal)
Pagina fine
  • 2857 (literal)
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  • 354 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR, IMIP, Inst Inorgan Methodol & Plasmas, I-70126 Bari, Italy [ 2 ] INSTM, UdR Bari, I-70126 Bari, Italy (literal)
Titolo
  • Correlation between structure and properties of Er2O3 nanocrystalline thin films (literal)
Abstract
  • Er2O3 thin films have been deposited by low-pressure metalorganic chemical vapor deposition (MOCVD) also plasma assisted (RP-MOCVD), using tris(isopropylcyclopentadienyl)erbium and O-2 on Si(100), Si(111) and corning glass substrates. The RP-MOCVD approach produced highly (100)-oriented, dense and mechanically stable Er2O3 films with columnar structure, while films with (111) texture are deposited by MOCVD. A high refractive index of 2.1 at 589.3 nm comparable to that of bulk single crystalline Er2O3, a high transparency in the vis-near UV range and an optical band-gap of 6.5 eV have been found, which make Er2O3 interesting as antireflective and protective coating. A static dielectric constant k similar to 12, a density of interface traps as low as 4.2 x 1010 cm(2) eV(-1), for 5-10 nm thick Er2O3 layers grown on Si(100), render the present Er2O3 films interesting also as high-k dielectric in CMOS devices. (C) 2008 Elsevier B.V. All rights reserved. (literal)
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