Characterization of chromium silicide thin layer formed on amorphous silicon films (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Characterization of chromium silicide thin layer formed on amorphous silicon films (Articolo in rivista) (literal)

Anno

• 2008-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.jnoncrysol.2007.10.040 (literal)

Alternative label

• D. Caputo, G. de Cesare , M. Ceccarelli , A. Nascetti , M. Tucci , L. Meda , M. Losurdo , G. Bruno (2008)
  Characterization of chromium silicide thin layer formed on amorphous silicon films
  in Journal of non-crystalline solids
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• D. Caputo, G. de Cesare , M. Ceccarelli , A. Nascetti , M. Tucci , L. Meda , M. Losurdo , G. Bruno (literal)

Pagina inizio

• 2171 (literal)

Pagina fine

• 2175 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 354 (literal)

Rivista

• Journal of non-crystalline solids (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Univ Roma La Sapienza, Dept Elect Engn, I-00184 Rome, Italy Res Ctr Casaccia, ENEA, I-00123 Rome, Italy Ctr Ric Novara, ENI R&M, I-28100 Novara, Ital CNR, IMIP, Res Ctr, I-70126 Bari, Italy (literal)

Titolo

• Characterization of chromium silicide thin layer formed on amorphous silicon films (literal)

Abstract

• A detailed investigation of the compositional, optical and electrical properties of a chromium silicide layer grown at room temperature on top of doped amorphous silicon films is presented. The formation of the layer is promoted only when phosphorous atoms are present in the film. The deposition of a very thin n-type doped layer (around 5 nm) on top of a p-type doped film has allowed us to achieve the chromium silicide formation also on p-type material without changing its doping properties. Angle resolved X-ray photoelectron spectroscopy measurements demonstrate the presence of chromium-oxide, chromium silicide and metallic chromium in similar percentages for both p- and n-type doped layers: From the ellipsometric analysis, the refractive index spectra have been extracted, and the layer thickness has been estimated to be 5 nm for both p- and n-type doped layers. From planar conductivity measurements, we have found that the chromium silicide promotes an activation energy reduction from 0.24 eV down to 0.017 eV for the n-type layer and from 0.36 eV down to 0.14 eV for the p-type film (literal)

Prodotto di

• Istituto di Nanotecnologia (NANOTEC) (Istituto)
• Plasmi per la Scienza dei Materiali (MD.P03.025.001) (Modulo)

Autore CNR

• MARIA LOSURDO (Unità di personale interno)
• GIOVANNI BRUNO (Unità di personale interno)

Incoming links:

Prodotto

• Istituto di Nanotecnologia (NANOTEC) (Istituto)
• Plasmi per la Scienza dei Materiali (MD.P03.025.001) (Modulo)

Autore CNR di

• GIOVANNI BRUNO (Unità di personale interno)
• MARIA LOSURDO (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of non-crystalline solids (Rivista)