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Kinetics of gallium adlayer adsorption/desorption on polar and non-polar GaN surfaces (Articolo in rivista)

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Kinetics of gallium adlayer adsorption/desorption on polar and non-polar GaN surfaces (Articolo in rivista) (literal)

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S. Choi, T.-Ho Kim, H.O. Everitt, A. Brown, M, Losurdo, G. Bruno, A. Moto (2007)
Kinetics of gallium adlayer adsorption/desorption on polar and non-polar GaN surfaces
in Journal of vacuum science & technology. B, Microelectronics and nanometer structures
(literal)

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S. Choi, T.-Ho Kim, H.O. Everitt, A. Brown, M, Losurdo, G. Bruno, A. Moto (literal)

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Duke Univ, Dept Phys, Durham, NC 27708 USA [ 2 ] Duke Univ, Dept Elect & Comp Engn, Durham, NC 27708 USA [ 3 ] CNR, Inst Inorgan Methodol Plasmas, I-470126 Bari, Italy [ 4 ] Innovat Core SEI Inc, Santa Clara, CA 95051 USA (literal)

Titolo

Kinetics of gallium adlayer adsorption/desorption on polar and non-polar GaN surfaces (literal)

Abstract

Spectroscopic ellipsometry installed on a GEN-II plasma assisted molecular beam epitaxy machine has been shown to be art effective in situ real time tool for monitoring the kinetics of gallium adlayer adsorption/desorption on the GaN surface. In this work, the authors present data on the study of Ga adsorption/desorption on polar c-plane GaN (0001) and nonpolar m-plane GaN (1 - 100) surfaces for Ga beam equivalent pressures in the range of 8.96X 10(-8)-1.86x 10(-7) Torr, Ga pulses in the range of 5-360 s, and for substrate temperatures between 650 and 750 degrees C. (literal)

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