Real Time Optical Monitoring of PA-MBE of InN on SiC Substrates (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Real Time Optical Monitoring of PA-MBE of InN on SiC Substrates (Articolo in rivista) (literal)

Anno

• 2007-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1116/1.2737433 (literal)

Alternative label

• M. Losurdo, Tong-Ho Kim, Soojeong Choi, Pae Wu, G. Bruno, A. Brown (2007)
  Real Time Optical Monitoring of PA-MBE of InN on SiC Substrates
  in Journal of vacuum science & technology. B, Microelectronics and nanometer structures
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• M. Losurdo, Tong-Ho Kim, Soojeong Choi, Pae Wu, G. Bruno, A. Brown (literal)

Pagina inizio

• 1014 (literal)

Pagina fine

• 1018 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 25 (literal)

Rivista

• Journal of vacuum science & technology. B, Microelectronics and nanometer structures (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR, Inst Inorgan Methodol & Plasmas, I-70126 Bari, Italy [ 2 ] INSTM, I-70126 Bari, Italy [ 3 ] Duke Univ, Dept Elect & Comp Engn, Durham, NC 27708 USA (literal)

Titolo

• Real Time Optical Monitoring of PA-MBE of InN on SiC Substrates (literal)

Abstract

• Spectroscopic ellipsometry has been used to monitor in real time and in situ the molecular beam epitaxial growth of InN on SiC substrates. A three-step growth process consisting of (i) low-temperature (200 degrees C) nitridation of the SiC surface, (ii) low-temperature (350 degrees C) nucleation of a thin InN buffer layer, and (iii) growth of the InN epitaxial layer at 450 degrees C has been applied. The impact of the In flux on the growth kinetics, morphology, and structural and optical properties of InN has been investigated. It is found that independent of the In flux the low-temperature buffer shows In surface accumulation. This In surface accumulation increases during InN growth under In-rich conditions and is depleted during growth under intermediate and N-rich conditions. Better structural, morphological, and optical properties are obtained when the films are grown under In-rich conditions. (literal)

Prodotto di

• Plasmi per la Scienza dei Materiali (MD.P03.025.001) (Modulo)
• Istituto di Nanotecnologia (NANOTEC) (Istituto)

Autore CNR

• MARIA LOSURDO (Unità di personale interno)
• GIOVANNI BRUNO (Unità di personale interno)

Incoming links:

Prodotto

• Istituto di Nanotecnologia (NANOTEC) (Istituto)
• Plasmi per la Scienza dei Materiali (MD.P03.025.001) (Modulo)

Autore CNR di

• GIOVANNI BRUNO (Unità di personale interno)
• MARIA LOSURDO (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of vacuum science & technology. B, Microelectronics and nanometer structures (Rivista)