http://www.cnr.it/ontology/cnr/individuo/prodotto/ID34060

Discontinuous Molecular Films Can Control Metal/Semiconductor Junctions (Articolo in rivista)

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Label

Discontinuous Molecular Films Can Control Metal/Semiconductor Junctions (Articolo in rivista) (literal)

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Alternative label

H. Haick(a), M. Ambrico(b), T. Ligonzo(c), D. Cahen(a) (2004)
Discontinuous Molecular Films Can Control Metal/Semiconductor Junctions
in Advanced materials (Weinh., Print); WILEY-V C H VERLAG GMBH, WEINHEIM (Germania)
(literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

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(a)Department of Materials and Interfaces, Weizmann Institute of Science, Rehovot, 76100, Israel. E-mail: david.cahen@weizmann.ac.il; Fax: þ972-8-9344139/8 (b) CNR-IMIP, Sezione di Bari, Via Orabona, 4 I-70126 Bari, Italy (c) Dipartimento di Fisica Universita` degli Studi di Bari and Istituto Nazionale di Fisica della Materia - Sezione di Bari, Via Orabona, 4 I-70126 Bari, Italy (literal)

Titolo

Discontinuous Molecular Films Can Control Metal/Semiconductor Junctions (literal)

Abstract

Molecular control over charge transport across a metal/semiconductor interface persists even if there is only a partial monolayer of polar molecules at the interface. This is because the long-range electrostatic effect of the dipole layer also affects the semiconductor regions under the film's pinholes. Thus, all types of polar molecules that show average order at the interface can be used. (literal)

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