Properties of Hogh Porosity Sol-Gel Derived Indium-Tin Oxide films (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Properties of Hogh Porosity Sol-Gel Derived Indium-Tin Oxide films (Articolo in rivista) (literal)

Anno

• 2005-01-01T00:00:00+01:00 (literal)

Alternative label

• T. F. Stoica, M. Gartner, T. Stoica, M. Losurdo, V.S. Teodorescu, M. G.Blanchin, M. Zaharescu (2005)
  Properties of Hogh Porosity Sol-Gel Derived Indium-Tin Oxide films
  in Journal of Optoelectronics and Advanced Materials (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• T. F. Stoica, M. Gartner, T. Stoica, M. Losurdo, V.S. Teodorescu, M. G.Blanchin, M. Zaharescu (literal)

Pagina inizio

• 2353 (literal)

Pagina fine

• 2358 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 7 (literal)

Rivista

• Journal of Optoelectronics and Advanced Materials (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• [ 1 ] Natl Inst Mat Phys, Bucharest 77125, Romania [ 2 ] Romanian Acad Sci, Inst Phys Chem, Bucharest 77208, Romania [ 3 ] CNR, Plasma Chem Res Ctr, I-70126 Bari, Italy [ 4 ] Univ Lyon 1, Lab Phys Mat Condensee & Nanostruct, F-69622 Villeurbanne, France (literal)

Titolo

• Properties of Hogh Porosity Sol-Gel Derived Indium-Tin Oxide films (literal)

Abstract

• ndium-tin oxide (ITO) sol-gel films have been obtained with the void concentration up to 50%. The films are nanostructured with nanocrystals of In2O3:Sn and nanovoids. The information obtained from derivative thermo-gravimetry was used to design the annealing program for ITO film formation with a high void concentration. Multilayer films were obtained by successive deposition. The thickness of one layer was about 9 nm. By successive depositions, the void density of the film is reduced. Quantitative analysis of the void density has been performed by spectroscopic ellipsometry. The conductivity of the films can be varied in a large range by annealing in vacuum or in air, at temperature higher than 200 degrees C. (literal)

Prodotto di

• Istituto di Nanotecnologia (NANOTEC) (Istituto)
• Plasmi per la Scienza dei Materiali (MD.P03.025.001) (Modulo)

Autore CNR

• MARIA LOSURDO (Unità di personale interno)

Incoming links:

Prodotto

• Istituto di Nanotecnologia (NANOTEC) (Istituto)
• Plasmi per la Scienza dei Materiali (MD.P03.025.001) (Modulo)

Autore CNR di

• MARIA LOSURDO (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of Optoelectronics and Advanced Materials (Rivista)