http://www.cnr.it/ontology/cnr/individuo/prodotto/ID33974

III-nitrides on Oxygen and Zinc face ZnO Substrates (Articolo in rivista)

Type

Label

III-nitrides on Oxygen and Zinc face ZnO Substrates (Articolo in rivista) (literal)

Anno

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Alternative label

G. Namkoong, and W. A: Doolittle, M. Losurdo, P. Capezzuto, G. Bruno, B. Nemeth, J. Nause (2005)
III-nitrides on Oxygen and Zinc face ZnO Substrates
in Applied physics letters
(literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

G. Namkoong, and W. A: Doolittle, M. Losurdo, P. Capezzuto, G. Bruno, B. Nemeth, J. Nause (literal)

Pagina inizio

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Rivista

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Note

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Georgia Inst Technol, Sch Elect & Comp Engn, Ctr Microelect Res, Atlanta, GA 30332 USA 2. CNR, IMIP, Inst Inorgan Methodol & Plasmas, I-70126 Bari, Italy 3. INSTM, I-70126 Bari, Italy 4. Cermet Inc, Atlanta, GA 30318 USA (literal)

Titolo

Abstract

The characteristics of III-nitrides grown on zinc- and oxygen-face ZnO by plasma-assisted molecular beam epitaxy were investigated. The reflection high-energy electron diffraction pattern indicates formation of a cubic phase at the interface between III-nitride and both Zn- and O-face ZnO. The polarity indicates that Zn-face ZnO leads to a single polarity, while O-face ZnO forms mixed polarity of III-nitrides. Furthermore, by using a vicinal ZnO substrate, the terrace-step growth of GaN was realized with a reduction by two orders of magnitude in the dislocation-related etch pit density to similar to 10(8) cm(-2), while a dislocation density of similar to 10(10) cm(-2) was obtained on the on-axis ZnO substrates (literal)

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