http://www.cnr.it/ontology/cnr/individuo/prodotto/ID33869

Controlling Au/n-GaAs junctions by partial molecular monolayers (Articolo in rivista)

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Label

Controlling Au/n-GaAs junctions by partial molecular monolayers (Articolo in rivista) (literal)

Anno

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Alternative label

Hossam Haick (a,b); Jonathan P. Pelz(c); Teresa Ligonzo (d); Marianna Ambrico (e), David Cahen (a); Wei Cai (f); Camelia Marginean (c); Cristian Tivarus (c); Raymond T. Tung (f) (2006)
Controlling Au/n-GaAs junctions by partial molecular monolayers
in Physica status solidi. A, Applications and materials science (Internet); WILEY-V C H VERLAG GMBH, WEINHEIM (Germania)
(literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

Hossam Haick (a,b); Jonathan P. Pelz(c); Teresa Ligonzo (d); Marianna Ambrico (e), David Cahen (a); Wei Cai (f); Camelia Marginean (c); Cristian Tivarus (c); Raymond T. Tung (f) (literal)

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Note

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a Department of Materials and Interfaces, Weizmann Institute of Science, Rehovot 76100, Israel b Department of Chemical Engineering and Russell Berrie Nanotechnology Institute, Technion - Israel Institute of Technology, Haifa 32000, Israel c Department of Physics, Ohio State University, Ohio 43210-1106, US d Dipartimento to di Fisica Universitá degli Studi di Bari and INFM, Via Orabona 4, 70126 Bari, Italy e CNR-IMIP, Sezione di Bari, Via Orabona 4, 70126 Bari, Italy f Department of Physics, Brooklyn College, City University of New York, Brooklyn, New York 11210, USA (literal)

Titolo

Abstract

metal/semiconductor junctions with a discontinuous monolayer of polar molecules at the metal/semiconductor interface. The effective barrier height of those junctions, which have small pinholes, embedded in a molecular layer, which introduces a negative {positive} dipole (i.e., a dipole whose negative {positive} pole is the one that is closest to the semiconductor surface) on an n-type {p-type} semiconductor, is often \"tunable\" by the magnitude and density of the dipoles. If the lateral dimensions of a molecule-free pinhole at the interface exceed the semiconductor depletion width, carrier transport is not influenced by the molecular layer and the \"effective\" barrier height is the nominal metal/semiconductor barrier height. If the molecular layer introduces a positive {negative} dipole on an n-type {p-type} semiconductor, enhanced field emission at edges of small pinholes might lead to a leakage- and/or an edge-current component resulting in an effective barrier height lower than the nominal one. We support these conclusions by direct measurements of the nm-scale electronic behaviour of a Au/n-GaAs diode with a discontinuous monolayer of dicarboxylic acids at the interface, using Ballistic Electron Emission Microscopy (BEEM). (literal)

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