http://www.cnr.it/ontology/cnr/individuo/prodotto/ID33866
The kinetics of gallium adsorption and desorption on (0001) gallium nitride surfaces (Articolo in rivista)
- Type
- Label
- The kinetics of gallium adsorption and desorption on (0001) gallium nitride surfaces (Articolo in rivista) (literal)
- Anno
- 2006-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1063/1.2372744 (literal)
- Alternative label
S. Choi, T.H.Kim, H.O. Everitt, A. Brown, M.Losurdo, G. Bruno, A. Moto (2006)
The kinetics of gallium adsorption and desorption on (0001) gallium nitride surfaces
in Applied physics letters
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- S. Choi, T.H.Kim, H.O. Everitt, A. Brown, M.Losurdo, G. Bruno, A. Moto (literal)
- Pagina inizio
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- [ 1 ] Duke Univ, Dept Phys, Durham, NC 27708 USA
[ 2 ] Duke Univ, Dept Elect & Comp Engn, Durham, NC 27708 USA
[ 3 ] CNR, Inst Inorgan Methodol & Plasmas, I-70126 Bari, Italy
[ 4 ] INSTM, I-70126 Bari, Italy
[ 5 ] Innovat Core SEI Inc, Santa Clara, CA 95051 US (literal)
- Titolo
- The kinetics of gallium adsorption and desorption on (0001) gallium nitride surfaces (literal)
- Abstract
- In situ spectroscopic ellipsometry kinetic characterization is used to monitor the behavior of Ga atoms during and after Ga flux impingement upon a (0001) GaN surface at various temperatures in the range of 680 - 750 S degrees C. The observed saturation of the pseudodielectric function verifies the existence of a critical thickness for the Ga wetting layer, while the observed desorption delay after the Ga flux is terminated indicates the presence of two Ga phases, one acting as a Ga reservoir to compensate the desorption of the wetting layer until the other phase is depleted. (literal)
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- Autore CNR
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