Impact of 4H and 6H SiC 0001 nitridation on Ga wetting layer development and GaN growth by molecular beam epitaxy (Articolo in rivista)

Type
Label
  • Impact of 4H and 6H SiC 0001 nitridation on Ga wetting layer development and GaN growth by molecular beam epitaxy (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.2220007 (literal)
Alternative label
  • T-H Kim, S. Choi, A. S. Brown M. Losurdo and G. Bruno (2006)
    Impact of 4H and 6H SiC 0001 nitridation on Ga wetting layer development and GaN growth by molecular beam epitaxy
    in Applied physics letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • T-H Kim, S. Choi, A. S. Brown M. Losurdo and G. Bruno (literal)
Pagina inizio
  • 021916 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 89 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • [ 1 ] Duke Univ, Dept Elect & Comp Engn, Durham, NC 27708 USA [ 2 ] CNR, IMIP, Inst Inorgan Methodol & Plasmas, I-70126 Bari, Italy [ 3 ] INSTM UdR Bari, I-70126 Bari, Italy (literal)
Titolo
  • Impact of 4H and 6H SiC 0001 nitridation on Ga wetting layer development and GaN growth by molecular beam epitaxy (literal)
Abstract
  • GaN epitaxial layers have been grown by plasma-assisted molecular beam epitaxy on Si-face 4H- and 6H-SiC(0001)(Si) substrates. The impact of the SiC surface preparation and oxide removal achieved via a Ga flash-off process followed by nitridation on the structure and properties of GaN epitaxial layers is articulated. A correlation among the SiC surface nitridation conditions, the Ga wetting layer development, the nucleation layer, and GaN crystalline properties is revealed. (literal)
Prodotto di
Autore CNR

Incoming links:


Prodotto
Autore CNR di
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
data.CNR.it