Real time ellipsometry for monitoring plasma-assisted epitaxial growth of GaN (Articolo in rivista)

Type
Label
  • Real time ellipsometry for monitoring plasma-assisted epitaxial growth of GaN (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.apsusc.2006.05.129 (literal)
Alternative label
  • G. Bruno, M. Losurdo, M. M. Giangregorio, P. Capezzuto, A. S. Brown, Tong-Ho Kim, S. Choi (2006)
    Real time ellipsometry for monitoring plasma-assisted epitaxial growth of GaN
    in Applied surface science
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • G. Bruno, M. Losurdo, M. M. Giangregorio, P. Capezzuto, A. S. Brown, Tong-Ho Kim, S. Choi (literal)
Pagina inizio
  • 219 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 253 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR, Inst Inorgan Methodol & Plasmas, IMIP, I-70126 Bari, Italy [ 2 ] Univ Bari, INSTM, I-70126 Bari, Italy [ 3 ] Duke Univ, Dept Elect & Comp Engn, Durham, NC 27706 USA (literal)
Titolo
  • Real time ellipsometry for monitoring plasma-assisted epitaxial growth of GaN (literal)
Abstract
  • GaN is grown on Si-face 4H-SiC(001) substrates using remote plasma-assisted methods including metalorganic chemical vapour deposition (RP-MOCVD) and molecular beam epitaxy (MBE). Real time spectroscopic ellipsometry is used for monitoring all the steps of substrate pre-treatments and the heteroepitaxial growth of GaN on SiC. Our characterization emphasis is on understanding the nucleation mechanism and the GaN growth mode, which depend on the SiC surface preparation. (literal)
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