Probing electrical properties of molecule-controlled or plasma-nitrided GaAs surfaces: Two different tools for modifying the electrical characteristics of metal/GaAs diodes (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Probing electrical properties of molecule-controlled or plasma-nitrided GaAs surfaces: Two different tools for modifying the electrical characteristics of metal/GaAs diodes (Articolo in rivista) (literal)

Anno

• 2006-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.apsusc.2006.03.057 (literal)

Alternative label

• M. Ambrico, M. Losurdo, P. Capezzuto, G. Bruno, T. Ligonzo, H. Haick (2006)
  Probing electrical properties of molecule-controlled or plasma-nitrided GaAs surfaces: Two different tools for modifying the electrical characteristics of metal/GaAs diodes
  in Applied surface science
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• M. Ambrico, M. Losurdo, P. Capezzuto, G. Bruno, T. Ligonzo, H. Haick (literal)

Pagina inizio

• 736 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 252 (literal)

Rivista

• Applied surface science (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• [ 1 ] CNR, Ist Medodol Inorgan & Plasmi, I-70126 Bari, Italy [ 2 ] Univ Bari, Dipartimento Interateneo Fis, I-70126 Bari, Italy [ 3 ] CNISM, Unita Bari, I-70126 Bari, Italy [ 4 ] Weizmann Inst Sci, Dept Mat & Interfaces, IL-76100 Rehovot, Israel [ 5 ] CALTECH, Div Chem & Chem Engn, Pasadena, CA 91106 USA (literal)

Titolo

• Probing electrical properties of molecule-controlled or plasma-nitrided GaAs surfaces: Two different tools for modifying the electrical characteristics of metal/GaAs diodes (literal)

Abstract

• This work shows how partial monolayer of organic molecules or radio-frequency remote plasma surface treatment affects the electrical transport across Au/n-GaAs junctions. In the first case, a series of molecules with systematically varying dipole moment were adsorbed on n-GaAs surfaces, whereas in the second case GaN ultra-thin layers with different thickness were formed by N-2-H-2 GaAs plasma nitridation, prior to contact deposition. The characteristics of electrical charge transport across the resulting interfaces were studied by current-voltage (I-V), internal photoemission (IPE), and capacitance-voltage (C-V) techniques. In this way, we find that the simplest description for the experimentally observed data is in terms of two different barrier heights, rather than one barrier height, at the interface. The first could be identified with areas free of modified GaAs, and the second with areas controlled by electrostatic effects of adjacent dipolar domains, which affects also semiconductor regions under the film's pinholes. (literal)

Prodotto di

• Istituto di Nanotecnologia (NANOTEC) (Istituto)
• Plasmi per la Scienza dei Materiali (MD.P03.025.001) (Modulo)

Autore CNR

• GIOVANNI BRUNO (Unità di personale interno)
• MARIANNA AMBRICO (Persona)
• MARIA LOSURDO (Unità di personale interno)

Incoming links:

Prodotto

• Istituto di Nanotecnologia (NANOTEC) (Istituto)
• Plasmi per la Scienza dei Materiali (MD.P03.025.001) (Modulo)

Autore CNR di

• GIOVANNI BRUNO (Unità di personale interno)
• MARIA LOSURDO (Unità di personale interno)
• MARIANNA AMBRICO (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied surface science (Rivista)