Fundamental reactions controlling anion exchange during mixed anion heterojunction formation: Chemistry and kinetics of P-for-As exchange reaction (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Fundamental reactions controlling anion exchange during mixed anion heterojunction formation: Chemistry and kinetics of P-for-As exchange reaction (Articolo in rivista) (literal)

Anno

• 2006-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.2194126 (literal)

Alternative label

• A.S. Brown, M. Losurdo, G. Bruno, T. Brown, G. May (2006)
  Fundamental reactions controlling anion exchange during mixed anion heterojunction formation: Chemistry and kinetics of P-for-As exchange reaction
  in Journal of applied physics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• A.S. Brown, M. Losurdo, G. Bruno, T. Brown, G. May (literal)

Pagina inizio

• 093510 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 99 (literal)

Rivista

• Journal of applied physics (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1 ] Duke Univ, Dept Elect & Comp Engn, Durham, NC 27708 USA [ 2 ] Univ Bari, CNR, IMIP, Inst Inorgan Methodol & Plasmas, I-70126 Bari, Italy [ 3 ] Univ Bari, Dept Chem, INSTM, I-70126 Bari, Italy [ 4 ] Georgia Inst Technol, Atlanta, GA 30332 USA (literal)

Titolo

• Fundamental reactions controlling anion exchange during mixed anion heterojunction formation: Chemistry and kinetics of P-for-As exchange reaction (literal)

Abstract

• The fundamental chemical and kinetic surface processes governing the P-for-As exchange reaction during epitaxial layer synthesis are investigated. Exposure of a GaAs surface to phosphorus molecular beams (P-2) is carried out to create superlattice structures realized by surface reactions. The impact of the GaAs surface reconstruction, the P-soak time, and the surface temperature on the extent of intermixing and on the mechanism governing the anion exchange has been studied using x-ray diffraction, spectroscopic ellipsometry, x-ray photoelectron spectroscopy, and atomic force microscopy. It is found that As-rich GaAs surface reconstructions inhibit P-for-As exchange. The extent of the anion exchange increases with temperature. Furthermore, the P-for-As exchange is not controlled by P diffusion into the GaAs. We propose a chemical model that includes P chemisorption and indiffusion, and the competition between P-for-As anion exchange and the formation of AsP isoelectronic compounds. (literal)

Prodotto di

• Istituto di Nanotecnologia (NANOTEC) (Istituto)
• Plasmi per la Scienza dei Materiali (MD.P03.025.001) (Modulo)

Autore CNR

• GIOVANNI BRUNO (Unità di personale interno)
• MARIA LOSURDO (Unità di personale interno)

Incoming links:

Prodotto

• Istituto di Nanotecnologia (NANOTEC) (Istituto)
• Plasmi per la Scienza dei Materiali (MD.P03.025.001) (Modulo)

Autore CNR di

• GIOVANNI BRUNO (Unità di personale interno)
• MARIA LOSURDO (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of applied physics (Rivista)