Surface oxide relationship to band bending in GaN (Articolo in rivista)

Type
Label
  • Surface oxide relationship to band bending in GaN (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.2158701 (literal)
Alternative label
  • M. A. Garcia, S. D. Wolter, T. H. Kim, S. Choi, J. Bajer, April Brown, M. Losurdo and G. Bruno (2006)
    Surface oxide relationship to band bending in GaN
    in Applied physics letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • M. A. Garcia, S. D. Wolter, T. H. Kim, S. Choi, J. Bajer, April Brown, M. Losurdo and G. Bruno (literal)
Pagina inizio
  • 013506 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 88 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 3 (literal)
Note
  • Scopu (literal)
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-IMIP (literal)
Titolo
  • Surface oxide relationship to band bending in GaN (literal)
Abstract
  • A trend of increased near-surface valence band maximum band bending with increasing O/Ga relative fraction was observed, extrapolating to 2.7 eV +/- 0.1 eV for pristine GaN surfaces (0% O 1s peak area). This trend of apparent oxide overlayer coverage affecting the band bending linearly could lead to better understanding and characterization of oxidized GaN surfaces to control band bending for sensors or other devices (literal)
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