Wet Chemical nitridation of gaas (100) by hydrazine solution for surface passivation (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Wet Chemical nitridation of gaas (100) by hydrazine solution for surface passivation (Articolo in rivista) (literal)

Anno

• 2002-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.1479212 (literal)

Alternative label

• V.L. Berkovits, V.P. Ulin ,M. Losurdo ,P. Capezzuto ,G. Bruno ,G. Perna ,V. Capozzi (2002)
  Wet Chemical nitridation of gaas (100) by hydrazine solution for surface passivation
  in Applied physics letters
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• V.L. Berkovits, V.P. Ulin ,M. Losurdo ,P. Capezzuto ,G. Bruno ,G. Perna ,V. Capozzi (literal)

Pagina inizio

• 3739 (literal)

Pagina fine

• 3741 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni

• This paper presents the scientific work developed in Bruno’s lab during the visit of prof. Berkovits and prof Ulin from Ioffe Physico Technical Institute, Saint Petersburg, Russia, which has a worldwide recognized expertise in semiconductor surface technology. IMPACT FACTOR=4.207 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 80 (literal)

Rivista

• Applied physics letters (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#descrizioneSinteticaDelProdotto

• The field is the GaAs chemical passivation. We succeeded in developing a wet methodology for the passivation of GaAs surfaces. In this field the research group led by Dr G. Bruno has been producing fundamental and applicative knowledge that is arguments of invited and plenary lectures at the Inter. Workshop on Semic. Surf. Passivation. (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• (1) Ioffe Institute, San Petersburg, Russia (2) IMIP-CNR, sez. Bari (3) Dept of Physics, Univ. of Bari (literal)

Titolo

• Wet Chemical nitridation of gaas (100) by hydrazine solution for surface passivation (literal)

Abstract

• A mild wet nitridation procedure using hydrazine-based solutions has been developed for GaAs(100) surface passivation. Both x-ray photoelectron spectroscopy and spectroscopic ellipsometry show that this nitridation procedure results in a very thin, coherent, and homogeneous GaN layer that is very stable in air. Photoluminescence data show a strong enhancement of the intensity as compared to that of an as-cleaned GaAs sample, indicating that this nitrided layer provides both chemical and electronic passivation of GaAs surfaces. The chemical mechanism of nitridation is discussed. © 2002 American Institute of Physics. _DOI: 10.1063/1.1479212 (literal)

Prodotto di

• Istituto di Nanotecnologia (NANOTEC) (Istituto)

Autore CNR

• GIOVANNI BRUNO (Unità di personale interno)
• MARIA LOSURDO (Unità di personale interno)

Insieme di parole chiave

• Parole chiave di "Wet Chemical nitridation of gaas (100) by hydrazine solution for surface passivation" (Insieme di parole chiave)

Incoming links:

Prodotto

• Istituto di Nanotecnologia (NANOTEC) (Istituto)

Autore CNR di

• GIOVANNI BRUNO (Unità di personale interno)
• MARIA LOSURDO (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied physics letters (Rivista)

Insieme di parole chiave di

• Parole chiave di "Wet Chemical nitridation of gaas (100) by hydrazine solution for surface passivation" (Insieme di parole chiave)