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Grain boundary transport in x-ray irradiated polycrystalline diamond (Articolo in rivista)

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Grain boundary transport in x-ray irradiated polycrystalline diamond (Articolo in rivista) (literal)

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G. Conte, M.C. Rossi, S. Salvatori, F. Fabbri, S. Loreti, P. Ascarelli, E. Cappelli, and D.M. Trucchi (2003)
Grain boundary transport in x-ray irradiated polycrystalline diamond
in Journal of applied physics
(literal)

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G. Conte, M.C. Rossi, S. Salvatori, F. Fabbri, S. Loreti, P. Ascarelli, E. Cappelli, and D.M. Trucchi (literal)

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Polycrystalline diamond thin films can be evaluated as optimal materials for the development of high-energy beam detectors and radiotherapy dosimetric devices. Electronic devices, however, need a deep understanding of the relation between structural and electronic properties of the material. The final aim of our work is to prepare a radiation dosimeter with controlled structure and linear response to the radiation source. The study of transport properties of polycrystalline CVD films, observed in the dark, before and after x-ray irradiation of the sample (vz. priming)revealed a peculiar behaviour. Main conduction paths occurs in the region between grain boundaries and diamond crystallyne grains have a specific role in the process: they inject active carriers into the conduction paths. The injection process is well described by a Frenkel-Poole mechanism in defect-associated trap states, while the conduction in between the grain boundaries may be better described by percolative paths occurring in conductive cluster regions. (literal)

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G. Conte, M. C. Rossi, and S. Salvatori INFM and Department of Electronic Engineering, University of Rome \"Roma Tre\" Via della Vasca Navale, 84-00146 Rome, Italy F. Fabbri and S. Loreti ENEA C.R. Frascati Via Enrico Fermi, 45-00044 Frascati, Rome, Italy P. Ascarelli, E. Cappelli, and D. Trucchi National Research Council (CNR), Institute of Inorganic Methodologies and Plasmas (IMIP) Via Salaria km 29,300-00016 Monterotondo Scalo, Rome, Italy (literal)

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Abstract

The transport properties of a \"thin\" polycrystalline diamond film are analyzed after the sample exposure to 8.06-keV x-ray radiation. Structure and morphology of the as-grown film have been evaluated by Raman, x-ray diffraction, and scanning electron microscopy techniques. The transport properties have been investigated by measuring dark currentvoltage characteristics in the temperature range of 60 to 360 K. Ohmic transport has been evidenced on the as-grown film up to 1.16×105 V/cm. After irradiation, nonlinear contributions to the dark current have been evidenced and related to field-assisted thermal ionization of traps. Below 200 K, hopping mechanisms have been observed. Correlations have been found among x-ray irradiation, density of traps involved in the transport processes, and the nonhomogeneous nature of the sample. A simple model of the grain boundary structure is proposed to explain the observations. ©2003 American Institute of Physics. (literal)

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