Znse films deposited on crystalline gaas and amorphous quartz substrates by means of pulsed laser ablation technique (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Znse films deposited on crystalline gaas and amorphous quartz substrates by means of pulsed laser ablation technique (Articolo in rivista) (literal)

Anno

• 2002-01-01T00:00:00+01:00 (literal)

Alternative label

• Perna G., Capozzi V., Plantamura M. C., Minafra A., Orlando S., Marotta V. (2002)
  Znse films deposited on crystalline gaas and amorphous quartz substrates by means of pulsed laser ablation technique
  
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Perna G., Capozzi V., Plantamura M. C., Minafra A., Orlando S., Marotta V. (literal)

Pagina inizio

• 541 (literal)

Pagina fine

• 545 (literal)

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• IMPACT FACTOR:1.741 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 29 (literal)

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• The interest of this paper is to compare the structural and optical properties of the ZnSe films deposited on different kinds of substrate. Therefore, we present experimental results on the X-ray diffraction (XRD), reflectance and PL properties of ZnSe films deposited by PLA on GaAs (100)- oriented and amorphous quartz in the identical growth conditions. In fact, the XRD spectra have shown that all the films are highly oriented but the film orientation is different in the two cases. In addition, the crystalline quality strongly depends on the substrate type: in fact, the films grown on amorphous quartz have a smaller grain size with respect to those deposited on GaAs single crystals. (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Perna G.UNIBA-INFM, Capozzi V.UNIBA-INFM, Plantamura M. C.UNIBA-INFM, Minafra A.UNIBA, Orlando S.CNR, Marotta V.CNR (literal)

Titolo

• Znse films deposited on crystalline gaas and amorphous quartz substrates by means of pulsed laser ablation technique (literal)

Abstract

• ZnSe films were deposited by pulsed laser ablation on a crystalline GaAs substrate and on an amorphous quartz substrate. The deposition process was performed with the same growth parameters. The films were investigated by means of X-ray diffraction, reflectance and photoluminescence spectroscopy. The X-ray diffraction spectra have demonstrated that the films grow in a highly oriented way but having different orientations, i.e. the films deposited on GaAs grow (100)-oriented and the films deposited on quartz grow (111)-oriented. Reflectance spectra as a function of the temperature have been analysed by means of the classical oscillator model, in order to obtain the temperature dependence of the band gap energy. This gives results comparable to those of ZnSe single crystals for ZnSe on GaAs, but it is redshifted for ZnSe on quartz, because of lattice and thermal strains. The photoluminescence measurements at T = 10 K confirm the better quality of ZnSe deposited on GaAs and show that pulsed laser ablation is a promising technique to grow films having intrinsic luminescence even on an amorphous substrate. (literal)

Prodotto di

• Istituto di Nanotecnologia (NANOTEC) (Istituto)

Autore CNR

• STEFANO ORLANDO (Unità di personale interno)
• IDA VERONICA MAROTTA (Persona)

Insieme di parole chiave

• Keywords of "Znse films deposited on crystalline gaas and amorphous quartz substrates by means of pulsed laser ablation technique" (Insieme di parole chiave)

Incoming links:

Prodotto

• Istituto di Nanotecnologia (NANOTEC) (Istituto)

Autore CNR di

• IDA VERONICA MAROTTA (Persona)
• STEFANO ORLANDO (Unità di personale interno)

Insieme di parole chiave di

• Keywords of "Znse films deposited on crystalline gaas and amorphous quartz substrates by means of pulsed laser ablation technique" (Insieme di parole chiave)