Effects of the Indium doping on structural and optical properties of CdSe thin films deposited by laser ablation technique (Articolo in rivista)

Type
Label
  • Effects of the Indium doping on structural and optical properties of CdSe thin films deposited by laser ablation technique (Articolo in rivista) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Alternative label
  • G. Perna, V. Capozzi, A. Minafra, M. Pallara, M. Ambrico (2003)
    Effects of the Indium doping on structural and optical properties of CdSe thin films deposited by laser ablation technique
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • G. Perna, V. Capozzi, A. Minafra, M. Pallara, M. Ambrico (literal)
Pagina inizio
  • 339 (literal)
Pagina fine
  • 339 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 32 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Titolo
  • Effects of the Indium doping on structural and optical properties of CdSe thin films deposited by laser ablation technique (literal)
Abstract
  • Thin Films of n-type CdSe have been grown on a quaz substrate by laser ablating a target obtained bu mixing CdSe and metallic In powders.The effects of different doping concentration of In have been investigated X-ray diffraction spectra show that a low In density only the CdSe lattice is present in the deposited film whereas CdIn2Se4 and InSe compounds are deposited at higher In concentration. Band gap narrowing and band tails are observed in the absorption spectra when the In concentration increases. Photoluminescence spectra show band-band recombinations from 10 K to room temperature. (literal)
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