Dielectric function of Nanocrystalline Silicon with Few Nanometers (<3nm) grain size (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Dielectric function of Nanocrystalline Silicon with Few Nanometers (<3nm) grain size (Articolo in rivista) (literal)

Anno

• 2003-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.1569052 (literal)

Alternative label

• M. Losurdo, M.M. Giangregorio, P. Capezzuto, G. Bruno, M.F. Cerqueira, M. Stepikova (2003)
  Dielectric function of Nanocrystalline Silicon with Few Nanometers (<3nm) grain size
  in Applied physics letters
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• M. Losurdo, M.M. Giangregorio, P. Capezzuto, G. Bruno, M.F. Cerqueira, M. Stepikova (literal)

Pagina inizio

• 2993 (literal)

Pagina fine

• 2995 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni

• It bring together expertise from optical analysis and deposition of Si (IMIP-CNR, Italy), Er co-sputtering (M.F. Cerqueira @ Departamanto de Fisica, Universidade do Minho, Braga, Porugal) and from photoluminescence (M. Stepikova @ Institute for physics of Microstructures RAS Novgorod, Russia) IMPACT FACTOR=4.207 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 82 (literal)

Rivista

• Applied physics letters (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#descrizioneSinteticaDelProdotto

• This paper focuses on the growth and the nanometrology of nanocrystalline silicon films (nc-Si:H). These subjects are very important to Si-based optoelectronics because nc-Si in a-Si:H and SiO2 matrixes are essential for the direct VIS luminescence of silicon and for the near-IR luminescence from Er-doped materials. This paper proposes an innovative optical non destructive procedure for detection of nanocrystallites. (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• (1)IMIP-CNR, sez. Bari (2)Dept of Physics Univ. do Minho, Braga, Portugal (3)Institute of Physics, Novgorod, Russia (literal)

Titolo

• Dielectric function of Nanocrystalline Silicon with Few Nanometers (<3nm) grain size (literal)

Abstract

• The dielectric function of nanocrystalline silicon ~nc-Si! with crystallite size in the range of 1 to 3 nm has been determined by spectroscopic ellipsometry in the range of 1.5 to 5.5 eV. ATauc–Lorentz parameterization is used to model the nc-Si optical properties. The nc-Si dielectric function can be used to analyze nondestructively nc-Si thin films where nanocrystallites that cannot be detected by conventional structural techniques, such as x-ray diffraction and Raman spectroscopy, are embedded in an a-Si:H matrix. Ellipsometric results are corroborated by transmission electron microscopy measurements. © 2003 American Institute of Physics. @DOI: 10.1063/1.1569052# (literal)

Prodotto di

• Plasmi per la Scienza dei Materiali (MD.P03.025.001) (Modulo)
• Istituto di Nanotecnologia (NANOTEC) (Istituto)

Autore CNR

• GIOVANNI BRUNO (Unità di personale interno)
• MARIA LOSURDO (Unità di personale interno)

Insieme di parole chiave

• Keywords of "Dielectric function of Nanocrystalline Silicon with Few Nanometers (<3nm) grain size" (Insieme di parole chiave)

Incoming links:

Prodotto

• Istituto di Nanotecnologia (NANOTEC) (Istituto)
• Plasmi per la Scienza dei Materiali (MD.P03.025.001) (Modulo)

Autore CNR di

• GIOVANNI BRUNO (Unità di personale interno)
• MARIA LOSURDO (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied physics letters (Rivista)

Insieme di parole chiave di

• Keywords of "Dielectric function of Nanocrystalline Silicon with Few Nanometers (<3nm) grain size" (Insieme di parole chiave)