Optical and electrical characterization of n-GaAs surfaces passivated by N2-H2 plasma (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Optical and electrical characterization of n-GaAs surfaces passivated by N2-H2 plasma (Articolo in rivista) (literal)

Anno

• 2003-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/S0022-2313(02)00603-8 (literal)

Alternative label

• V. Augelli, T. Ligonzo, A. Minafra, G. Perna, L. Schiavulli, V. Capozzi, M. Ambrico, M. Losurdo (2003)
  Optical and electrical characterization of n-GaAs surfaces passivated by N2-H2 plasma
  in Journal of luminescence
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• V. Augelli, T. Ligonzo, A. Minafra, G. Perna, L. Schiavulli, V. Capozzi, M. Ambrico, M. Losurdo (literal)

Pagina inizio

• 519 (literal)

Pagina fine

• 524 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 102 (literal)

Rivista

• Journal of luminescence (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• [ 1 ] Univ Foggia, Fac Med & Chirurg, I-71100 Foggia, Italy [ 2 ] Univ Bari, Dipartimento Interateneo Fis, I-70126 Bari, Italy [ 3 ] INFM, Unita Bari, I-70126 Bari, Italy [ 4 ] CNR, Ist Metodol Inorgan & Plasmi, I-70126 Bari, Italy (literal)

Titolo

• Optical and electrical characterization of n-GaAs surfaces passivated by N2-H2 plasma (literal)

Abstract

• The passivation of GaAs (1 0 0)surface has been performed by using remote N2 –H2 (3%in H2 )RF plasma nitridation.The samples,consisting of n-doped GaAs wafers,show photoluminescence enhancement when the nitridation time and exposure to the plasma are in a narrow temporal window,so that a very thin (about 10 (A)GaN layer is deposited on the GaAs surface.Pure N2 nitridation does not provide an ef .cient passivation,because it results in GaN layers with As and AsN x segregation at the GaN/GaAs interface.Increase of Au –GaAs Schottky barrier with the insertion of GaN interlayer and improvement of current –voltage characteristic have been observed. r 2002 Elsevier Science B.V.All rights reserved. PACS: 73.20;73.30;78.55 Keywords: GaAs;Photoluminescence;Nitridation;Schottky barrier (literal)

Prodotto di

• Istituto di Nanotecnologia (NANOTEC) (Istituto)
• Plasmi per la Scienza dei Materiali (MD.P03.025.001) (Modulo)

Autore CNR

• MARIANNA AMBRICO (Persona)
• MARIA LOSURDO (Unità di personale interno)

Incoming links:

Prodotto

• Istituto di Nanotecnologia (NANOTEC) (Istituto)
• Plasmi per la Scienza dei Materiali (MD.P03.025.001) (Modulo)

Autore CNR di

• MARIA LOSURDO (Unità di personale interno)
• MARIANNA AMBRICO (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of luminescence (Rivista)