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Boron nitride thin films deposited by RF plasma reactive pulsed laser ablation (Articolo in rivista)

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Boron nitride thin films deposited by RF plasma reactive pulsed laser ablation (Articolo in rivista) (literal)

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Alternative label

V.Marotta, S. Orlando, G.P. Parisi, A. Santagata (2003)
Boron nitride thin films deposited by RF plasma reactive pulsed laser ablation
in Applied surface science
(literal)

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CNR, IMIP/PZ, Zona Industriale di Tito Scalo, I 85050 Tito Scalo (PZ), Italy Dipartimento di Chimica, Università degli Studi della Basilicata, Via N. Sauro 85, 85100 Potenza, Italy (literal)

Titolo

Boron nitride thin films deposited by RF plasma reactive pulsed laser ablation (literal)

Abstract

Boron nitride thin films have been deposited on Si (100) substrates by reactive pulsed laser ablation of a pure boron target in presence of a 13.56 MHz radio frequency (RF) plasma, 10 Pa static atmosphere ofN2, and using a doubled frequency Nd:YAG laser (wavelength=532nm). The gaseous species have been deposited at several substrate temperatures, up to 1000 K, using the on-axis configuration. Thin films have been characterized by scanning electron microscopy, X-ray diffraction and IR spectroscopy. A comparison between the thin films produced by conventional ns pulsed laser deposition (PLD) and reactive RF plasma-assisted PLD is also reported. Besides, optical emission spectroscopy of the two experimental procedures has been performed in order to highlight the role played by the ionized and neutral species during both deposition methods. (literal)

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