SiO2 etching with perfluorobutadiene in a dual frequency plasma reactor (Articolo in rivista)

Type
Label
  • SiO2 etching with perfluorobutadiene in a dual frequency plasma reactor (Articolo in rivista) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Alternative label
  • F. Fracassi, R. d'-Agostino, E. Fornelli, F. Illuzzi, T. Shirafuji (2003)
    SiO2 etching with perfluorobutadiene in a dual frequency plasma reactor
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • F. Fracassi, R. d'-Agostino, E. Fornelli, F. Illuzzi, T. Shirafuji (literal)
Pagina inizio
  • 638 (literal)
Pagina fine
  • 642 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 21 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Titolo
  • SiO2 etching with perfluorobutadiene in a dual frequency plasma reactor (literal)
Abstract
  • The plasma etching Of SiO2 has been investigated in perfluorobutadiene-oxygen containing plasmas using a homemade dual frequency reactor. The process has been characterized by evaluating SiO2 etch rate, SiO2-to-Si selectivity, the surface contamination of Si, and the atmospheric emission of greenhouse gases. The plasma phase has been studied by means of optical emission spectroscopy. Perfluorobutadiene appears to be promising for replacing conventional high global warming potential reactants in SiO2 dry etching (literal)
Prodotto di
Autore CNR

Incoming links:


Prodotto
Autore CNR di
data.CNR.it