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Defect-induced states in the electronic structure of a Cu(100)-benzenethiolate-pentacene heterostructure (Articolo in rivista)
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- Label
- Defect-induced states in the electronic structure of a Cu(100)-benzenethiolate-pentacene heterostructure (Articolo in rivista) (literal)
- Anno
- 2008-01-01T00:00:00+01:00 (literal)
- Alternative label
Kanjilal, A; Betti, MG; Mariani, C (2008)
Defect-induced states in the electronic structure of a Cu(100)-benzenethiolate-pentacene heterostructure
in Journal of applied physics
(literal)
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- Kanjilal, A; Betti, MG; Mariani, C (literal)
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- Rivista
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- ISI Web of Science (WOS) (literal)
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- \"[Kanjilal, Aloke] Ctr Nanostruct & Biosyst Surfaces S3, CNR, INFM, I-41100 Modena, Italy; [Betti, Maria Grazia; Mariani, Carlo] Univ Roma La Sapienza, Dipartimento Fis, I-00185 Rome, Italy; [Betti, Maria Grazia] INFM CNR CRS SOFT, I-00185 Rome, Italy (literal)
- Titolo
- Defect-induced states in the electronic structure of a Cu(100)-benzenethiolate-pentacene heterostructure (literal)
- Abstract
- We report on the influence of defects in the electronic properties of a pentacene single-layer grown on a benzenethiolate self-assembled-monolayer (Bt-SAM) adsorbed on Cu(100) at 300 K, using high-resolution ultraviolet photoelectron spectroscopy. The weak interaction between pentacene and the underlying Bt-SAM is deduced by the lineshape and evolution of the highest-occupied molecular orbital (HOMO). Closer inspection of the pentacene HOMO band reveals a skewed feature, where the contribution in the low binding energy side is found originating from states associated to structural defects that can be reduced by controlled mild-temperature annealing (355 K). Presence of such defects influences also the pentacene HOMO onset energy and hole-injection barrier that can be reduced to typical value of this organic heterostructure after the annealing. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2986157] (literal)
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