http://www.cnr.it/ontology/cnr/individuo/prodotto/ID329656
Effect of substrate temperature on the arrangement of ultra-thin TiO2 films grown by a dc-magnetron sputtering deposition (Articolo in rivista)
- Type
- Label
- Effect of substrate temperature on the arrangement of ultra-thin TiO2 films grown by a dc-magnetron sputtering deposition (Articolo in rivista) (literal)
- Anno
- 2015-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/j.tsf.2015.04.007 (literal)
- Alternative label
V. Bukauskas, S. Kaciulis, A. Mezzi, A. Mironas, G. Niaura, M. Rudzikas, I. Simkiene, A. Setkus (2015)
Effect of substrate temperature on the arrangement of ultra-thin TiO2 films grown by a dc-magnetron sputtering deposition
in Thin solid films (Print)
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- V. Bukauskas, S. Kaciulis, A. Mezzi, A. Mironas, G. Niaura, M. Rudzikas, I. Simkiene, A. Setkus (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- Center for Physical Sciences and Technology, A. Go?tauto 11, LT-01108 Vilnius, Lithuania
Istituto per lo Studio dei Materiali Nanostrutturati, ISMN-CNR, P.O. Box 10, I-00015 Monterotondo Stazione, Roma, Italy (literal)
- Titolo
- Effect of substrate temperature on the arrangement of ultra-thin TiO2 films grown by a dc-magnetron sputtering deposition (literal)
- Abstract
- TiO2 films with a thickness between 3 and 10 nm are obtained by a dc-magnetron sputtering deposition in the
reactive gas atmosphere and the properties of the films are investigated by the Raman spectroscopy, X-ray
photoelectron spectroscopy and scanning probe microscopy. An influence of the deposition temperature and
the post-growth annealing on the properties of the films is studied at the temperatures from 375 to 650 K. It is
experimentally demonstrated that the crystalline structure can be identified by the Raman spectroscopy in the
films with the thickness higher than 9 nm and annealed in the oxygen rich atmosphere for at least 2 h at
about 630 K. It is proved that the changes in the film structure are not related to the changes in the chemical
composition, the Ti state, and the stoichiometry of the films. Basing on the fractal analysis of topographical
images, it is shown that the structural changes can be associated with the changes in the fractal dimension.
These changes can be a quantitative characteristic of the structure for the films thinner than 10 nm. (literal)
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