Importance of on-site corrections to the electronic and structural properties of InN in crystalline solid, nonpolar surface, and nanowire forms (Articolo in rivista)

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  • Importance of on-site corrections to the electronic and structural properties of InN in crystalline solid, nonpolar surface, and nanowire forms (Articolo in rivista) (literal)
Anno
  • 2010-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1103/PhysRevB.82.165307 (literal)
Alternative label
  • Terentjevs A.; Catellani A.; Prendergast D.; Cicero G. (2010)
    Importance of on-site corrections to the electronic and structural properties of InN in crystalline solid, nonpolar surface, and nanowire forms
    in Physical review. B, Condensed matter and materials physics; The American Physical Society, College Park, MD 20740-3844 (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Terentjevs A.; Catellani A.; Prendergast D.; Cicero G. (literal)
Pagina inizio
  • 165307-1 (literal)
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  • http://prb.aps.org/abstract/PRB/v82/i16/e165307 (literal)
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  • 82 (literal)
Rivista
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  • In: Physical Review B, vol. 82 (16) article n. 165307. American Physical Society, 2010. (literal)
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  • 6 (literal)
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  • 16 (literal)
Note
  • ISI Web of Science (WOS) (literal)
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  • Politecnico di Torino, Physics Department, Turin, CNR-IMEM, Parma, The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, USA, Department of Materials Science and Chemical Engineering, Politecnico di Torino, Italy (literal)
Titolo
  • Importance of on-site corrections to the electronic and structural properties of InN in crystalline solid, nonpolar surface, and nanowire forms (literal)
Abstract
  • In this work, we employ first-principle calculations to predict the structural and electronic properties of InN nanowires comparing the results obtained at the local-density approximation (LDA) and at the LDA+U level. Our study suggests that in the case of wurtzite InN it is important to apply an on-site Hubbard correction to both the indium d states and the nitrogen p states in order to recover the correct energy level symmetry and ordering at the “ point of the Brillouin zone and obtain a reliable description of InN band structure. We apply the methodology to predict the electronic properties of InN nanowires and find that LDA and LDA+U results are in qualitative agreement both in terms of confinement and surface-passivant effects. (literal)
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