A Spectrum Image Cathodoluminescence Study of Dislocations in Si-Doped Liquid-Encapsulated Czochralski GaAs Crystals (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• A Spectrum Image Cathodoluminescence Study of Dislocations in Si-Doped Liquid-Encapsulated Czochralski GaAs Crystals (Articolo in rivista) (literal)

Anno

• 2010-01-01T00:00:00+01:00 (literal)

Alternative label

• González M. A.; Martìnez O.; Jimenez J.; Frigeri C.; Weyher J. L. (2010)
  A Spectrum Image Cathodoluminescence Study of Dislocations in Si-Doped Liquid-Encapsulated Czochralski GaAs Crystals
  in Journal of electronic materials
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• González M. A.; Martìnez O.; Jimenez J.; Frigeri C.; Weyher J. L. (literal)

Pagina inizio

• 781 (literal)

Pagina fine

• 786 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 39 (literal)

Rivista

• Journal of electronic materials (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note

• In: Journal of Electronic Materials, vol. 39 (6) pp. 781 - 786. TMS, Warrendale (USA), 2010. (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Departamento Fìsica de la Materia Condensada, Universidad de Valladolid, 47011 Valladolid, Spain, CNR-IMEM, Parma, Institute of High-Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01142 Warsaw, Poland (literal)

Titolo

• A Spectrum Image Cathodoluminescence Study of Dislocations in Si-Doped Liquid-Encapsulated Czochralski GaAs Crystals (literal)

Abstract

• Dislocations in Si-doped liquid-encapsulated Czochralski GaAs crystals have been studied by spectrum imaging cathodoluminescence. The interaction between the dislocations and the crystal matrix results in complex atmospheres, which can extend several tens of micrometers around the dislocations. The formation of these atmospheres depends on the melt stoichiometry and the doping level. Different atmospheres formed during growth and postgrowth cooling were studied. Their main characteristics and possible scenarios of formation are suggested, taking account of the characteristics of the samples in terms of [As]/[Ga] ratio and doping. Excess As defects seem to play a major role in the formation of the atmospheres. (literal)

Prodotto di

• Istituto dei materiali per l'elettronica ed il magnetismo (IMEM) (Istituto)
• Sviluppo, caratterizzazione strutturale e modelling di strutture avanzate per elettronica (MD.P05.002.001) (Modulo)

Autore CNR

• CESARE FRIGERI (Persona)

Insieme di parole chiave

• Parole chiave di "A Spectrum Image Cathodoluminescence Study of Dislocations in Si-Doped Liquid-Encapsulated Czochralski GaAs Crystals" (Insieme di parole chiave)

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Prodotto

• Istituto dei materiali per l'elettronica ed il magnetismo (IMEM) (Istituto)
• Sviluppo, caratterizzazione strutturale e modelling di strutture avanzate per elettronica (MD.P05.002.001) (Modulo)

Autore CNR di

• CESARE FRIGERI (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of electronic materials (Rivista)

Insieme di parole chiave di

• Parole chiave di "A Spectrum Image Cathodoluminescence Study of Dislocations in Si-Doped Liquid-Encapsulated Czochralski GaAs Crystals" (Insieme di parole chiave)