SiC epitaxial growth on Si(100) substrates using carbon tetrabromide (Articolo in rivista)

Type
Label
  • SiC epitaxial growth on Si(100) substrates using carbon tetrabromide (Articolo in rivista) (literal)
Anno
  • 2010-01-01T00:00:00+01:00 (literal)
Alternative label
  • Attolini G.; Bosi M.; Rossi F.; Watts B. E.; Salviati G.; Battistig G.; Dobos L.; Pecz B. (2010)
    SiC epitaxial growth on Si(100) substrates using carbon tetrabromide
    in Materials science forum
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Attolini G.; Bosi M.; Rossi F.; Watts B. E.; Salviati G.; Battistig G.; Dobos L.; Pecz B. (literal)
Pagina inizio
  • 139 (literal)
Pagina fine
  • 142 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 645-6 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
  • In: Materials Science Forum, vol. 645-648 pp. 139 - 142. Trans Tech Publications, Switzerland, 2010. (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-IMEM, Parma, Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, P.O. Box 49, H-1525 BUDAPEST (Hungary) (literal)
Titolo
  • SiC epitaxial growth on Si(100) substrates using carbon tetrabromide (literal)
Abstract
  • 3C-SiC films were grown on Si by VPE using CBr4 as the carbon source, at temperatures ranging between 1100 to 1250°C. XRD, TEM, AFM, and SEM results indicate that the epitaxy proceeds as a 3D growth of uncoalesced islands at low temperature, whereas a continuous layer with hillocks on top is obtained above 1200°C. The shape and faceting of the islands are analyzed by AFM, showing (311) preferred facets. (literal)
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