Characterization of CZT crystals grown by the boron oxide encapsulated vertical Bridgman technique for the preparation of X-ray imaging detectors (Articolo in rivista)

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  • Characterization of CZT crystals grown by the boron oxide encapsulated vertical Bridgman technique for the preparation of X-ray imaging detectors (Articolo in rivista) (literal)
Anno
  • 2011-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.nima.2010.06.133 (literal)
Alternative label
  • Marchini L.; Zambelli N.; Piacentini G.; Zha M.; Calestani D.; Belas E.; Zappettini A. (2011)
    Characterization of CZT crystals grown by the boron oxide encapsulated vertical Bridgman technique for the preparation of X-ray imaging detectors
    in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT; ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS, AMSTERDAM (Paesi Bassi)
    (literal)
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  • Marchini L.; Zambelli N.; Piacentini G.; Zha M.; Calestani D.; Belas E.; Zappettini A. (literal)
Pagina inizio
  • S92 (literal)
Pagina fine
  • S94 (literal)
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  • 11th International Workshop on Radiation Imaging Detectors Location: Czech Technical Univ, Inst Experimental & Applied Phys, Prague, CZECH REPUBLIC Date: JUN 29-JUL 03, 2009 ID_PUMA: cnr.imem/2011-A0-018 (literal)
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  • http://www.sciencedirect.com/science/article/pii/S0168900210013239 (literal)
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  • 633 (literal)
Rivista
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  • In: Nuclear Instruments & Methods in Physics Research Section A-Accelerators Spectrometers Detectors and Associated Equipment, vol. 34 pp. 23 - 37. Elsevier, 2010. (literal)
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  • 3 (literal)
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  • 1 (literal)
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  • ISI Web of Science (WOS) (literal)
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  • [ 1 ] IMEM CNR, I-43100 Parma, Italy [ 2 ] Charles Univ Prague, Inst Phys, CZ-12116 Prague 2, Czech Republic (literal)
Titolo
  • Characterization of CZT crystals grown by the boron oxide encapsulated vertical Bridgman technique for the preparation of X-ray imaging detectors (literal)
Abstract
  • CdZnTe crystals for the preparation of X-ray imaging detectors have been grown by the boron oxide encapsulated vertical Bridgman method. The homogeneity of the crystals has been studied by photoluminescence mapping, energy dispersion X-ray analysis, and resistivity mapping. The zinc distribution follows an anomalous behavior that deviates from the normal freezing equation. The wafers cut perpendicular to the growth direction show an homogeneous resistivity distribution, suggesting the possible exploitation of these crystals for the production of large volume imaging detectors. (literal)
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