Modulation frequency dependence of the photoelectrical response of GaAs/InGaP superlattices (Articolo in rivista)

Type
Label
  • Modulation frequency dependence of the photoelectrical response of GaAs/InGaP superlattices (Articolo in rivista) (literal)
Anno
  • 2009-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.3260227 (literal)
Alternative label
  • Parisini A.(a); Ghezzi C.(a); Tarricone L.(a); Baldini M.(a); Vantaggio S.(a); Gombia E.(b) (2009)
    Modulation frequency dependence of the photoelectrical response of GaAs/InGaP superlattices
    in Journal of applied physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Parisini A.(a); Ghezzi C.(a); Tarricone L.(a); Baldini M.(a); Vantaggio S.(a); Gombia E.(b) (literal)
Pagina inizio
  • 113709-1 (literal)
Pagina fine
  • 113709-9 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://jap.aip.org/resource/1/japiau/v106/i11/p113709_s1 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 106 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
  • In: Journal of Applied Physics, vol. 106 article n. 113709. American Institute of Physics, 2009. (literal)
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  • 9 (literal)
Note
  • Scopu (literal)
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • (a) SEM LABS-CNISM-Dipartimento di Fisica, Università di Parma, Viale G.P. Usberti 7/A, 43100 Parma, Italy (b) CNR-IMEM, Parco Area delle Scienze 37/A, 43010 Parma, Italy (literal)
Titolo
  • Modulation frequency dependence of the photoelectrical response of GaAs/InGaP superlattices (literal)
Abstract
  • Photoelectrical measurements were taken on a nominally undoped-InGaP/GaAs superlattice, inserted between two p+ and n+ InGaP cladding layers. The sequence of InGaP/GaAs alternated layers forming the superlattice was grown lattice matched on n+-GaAs substrates through low pressure-metal organic vapor phase epitaxy, at growth conditions previously optimized for obtaining sharp interfaces and negligible ordering effects in the cation sublattice of the InGaP layers. A peculiar dependence of both the photocurrent and the photovoltaic signals on the modulation frequency of the exciting light beam was observed and then interpreted according to proper equivalent electrical circuits. The effects induced by an incomplete depletion of the nominally undoped superlattice region are analyzed in detail, and the analogies between photoelectrical investigation and admittance spectroscopy are pointed out. (literal)
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