Investigation of generation-recombination centres of Au/n-GaAs Schottky diodes with InAs self-assembled quantum dots (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Investigation of generation-recombination centres of Au/n-GaAs Schottky diodes with InAs self-assembled quantum dots (Articolo in rivista) (literal)

Anno

• 2009-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.mseb.2009.09.004 (literal)

Alternative label

• Hastas N. A.; Dimitriadis C.; Gombia E.; Frigeri P.; Franchi S.; Mosca R. (2009)
  Investigation of generation-recombination centres of Au/n-GaAs Schottky diodes with InAs self-assembled quantum dots
  in Materials science & engineering. B, Solid-state materials for advanced technology; ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS, AMSTERDAM (Paesi Bassi)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Hastas N. A.; Dimitriadis C.; Gombia E.; Frigeri P.; Franchi S.; Mosca R. (literal)

Pagina inizio

• 169 (literal)

Pagina fine

• 172 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://www.sciencedirect.com/science/journal/09215107 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 165 (literal)

Rivista

• Materials science & engineering. B, Solid-state materials for advanced technology (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note

• In: Materials Science and Engineering B-Solid State Materials for Advanced Technology, vol. 165 pp. 169 - 172. Elsevier, 2009. (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 3 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Department of Physics, University of Thessaloniki, 54124, Thessaloniki, Greece, CNR-IMEM, Parma (literal)

Titolo

• Investigation of generation-recombination centres of Au/n-GaAs Schottky diodes with InAs self-assembled quantum dots (literal)

Abstract

• Capacitance and reverse current-voltage measurements have been performed as a function of temperature on Au/n-GaAs Schottky diodes with InAs quantum dots (QDs) embedded between two GaAs spacers. The spacers were either doped or undoped containing a QD layer equivalent to 3 monolayer (ML) QD coverage. In the investigated temperature range of 77-350 K and for all the diodes measured, the apparent free electron concentration close to the QDs layer is lower compared to the concentration at the interface between GaAs doped buffer layer and GaAs n+-substrate, showing that the QDs induce more traps than those created at a conventional interface. Theoretical fitting of the capacitance-voltage characteristics yields the values of the energy level, the sheet concentration and the dispersion of the distribution of the confined states induced by the InAs quantum dots, which is higher for the diode with doped GaAs spacers than for the diode with undoped spacers. The effective activation energies of the traps, obtained from the effective generation lifetime calculated from reverse voltage current, agree well with the results obtained from the theoretical fitting. (literal)

Editore

• ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS (Editore)

Prodotto di

• Istituto dei materiali per l'elettronica ed il magnetismo (IMEM) (Istituto)
• Nanocompositi Ibridi e materiali metastabili per sistemi elettronici innovativi (SP.P02.001.001) (Modulo)
• Preparazione e caratterizzazione di nanostrutture per fotonica (MD.P03.004.001) (Modulo)

Autore CNR

• SECONDO FRANCHI (Persona)
• PAOLA FRIGERI (Unità di personale interno)
• ROBERTO MOSCA (Unità di personale interno)
• ENOS GOMBIA (Persona)

Insieme di parole chiave

• Parole chiave di "Investigation of generation-recombination centres of Au/n-GaAs Schottky diodes with InAs self-assembled quantum dots" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• ROBERTO MOSCA (Unità di personale interno)
• PAOLA FRIGERI (Unità di personale interno)
• SECONDO FRANCHI (Persona)
• ENOS GOMBIA (Persona)

Prodotto

• Istituto dei materiali per l'elettronica ed il magnetismo (IMEM) (Istituto)
• Nanocompositi Ibridi e materiali metastabili per sistemi elettronici innovativi (SP.P02.001.001) (Modulo)
• Preparazione e caratterizzazione di nanostrutture per fotonica (MD.P03.004.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Materials science & engineering. B, Solid-state materials for advanced technology (Rivista)

Editore di

• ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS (Editore)

Insieme di parole chiave di

• Parole chiave di "Investigation of generation-recombination centres of Au/n-GaAs Schottky diodes with InAs self-assembled quantum dots" (Insieme di parole chiave)