Evaluation of the composition of the interlayer at the inverted interface in InGaP/GaAs heterojunctions (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Evaluation of the composition of the interlayer at the inverted interface in InGaP/GaAs heterojunctions (Articolo in rivista) (literal)

Anno

• 2009-01-01T00:00:00+01:00 (literal)

Alternative label

• Frigeri C.; Attolini G.; Bosi M.; Pelosi C.; Germini F. (2009)
  Evaluation of the composition of the interlayer at the inverted interface in InGaP/GaAs heterojunctions
  in Superlattices and microstructures
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Frigeri C.; Attolini G.; Bosi M.; Pelosi C.; Germini F. (literal)

Pagina inizio

• 451 (literal)

Pagina fine

• 457 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 45 (literal)

Rivista

• Superlattices and microstructures (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note

• In: Superlattices and Microstructures, vol. 45 pp. 451 - 457. Elsevier Ltd, 2009. (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR-IMEM Institute, Parco Area delleScienze 37/A Parma (I) (literal)

Titolo

• Evaluation of the composition of the interlayer at the inverted interface in InGaP/GaAs heterojunctions (literal)

Abstract

• An evaluation of the composition of the extra interlayer at the GaAs-on-InGaP inverted interface in MOVPE grown InxGa1-xP/ GaAs heterostructures has been carried out by chemically sensitive (200) dark field TEM in the kinematical approximation. X-ray diffraction measurements have also been performed that showed that the extra interlayer had a negative strain to GaAs. In combination with this result the (200) dark field measurements allowed to establish that the extra interlayer can be either GaAs1-yPy (y = 0.55) or InxGa1-xAs1-yPy with 0 x 0.069 and 0.55 y 0.707. P/As intermixing is suggested to be the basic mechanism for the formation of either one of these two alloys. The formation of an interlayer of the quaternary compound additionally requires that In carry-over also occurs. (literal)

Prodotto di

• Sistemi per la conversione di energia (SP.P02.002.001) (Modulo)
• Istituto dei materiali per l'elettronica ed il magnetismo (IMEM) (Istituto)

Autore CNR

• GIOVANNI ATTOLINI (Unità di personale interno)
• MATTEO BOSI (Persona)
• CLAUDIO PELOSI (Persona)
• CESARE FRIGERI (Persona)

Insieme di parole chiave

• Keywords of "Evaluation of the composition of the interlayer at the inverted interface in InGaP/GaAs heterojunctions" (Insieme di parole chiave)

Incoming links:

Prodotto

• Istituto dei materiali per l'elettronica ed il magnetismo (IMEM) (Istituto)
• Sistemi per la conversione di energia (SP.P02.002.001) (Modulo)

Autore CNR di

• GIOVANNI ATTOLINI (Unità di personale interno)
• CESARE FRIGERI (Persona)
• CLAUDIO PELOSI (Persona)
• MATTEO BOSI (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Superlattices and microstructures (Rivista)

Insieme di parole chiave di

• Keywords of "Evaluation of the composition of the interlayer at the inverted interface in InGaP/GaAs heterojunctions" (Insieme di parole chiave)