Electrical and structural characterization of InAs/InGaAs quantum dot structures on GaAs (Articolo in rivista)

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Label
  • Electrical and structural characterization of InAs/InGaAs quantum dot structures on GaAs (Articolo in rivista) (literal)
Anno
  • 2009-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.mseb.2008.10.007 (literal)
Alternative label
  • Rimada J.; Prezioso M.; Nasi L.; Gombia E.; Mosca R.; Trevisi G.; Seravalli L.; Frigeri P.; Bocchi C.; Franchi S. (2009)
    Electrical and structural characterization of InAs/InGaAs quantum dot structures on GaAs
    in Materials science & engineering. B, Solid-state materials for advanced technology; ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS, AMSTERDAM (Paesi Bassi)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Rimada J.; Prezioso M.; Nasi L.; Gombia E.; Mosca R.; Trevisi G.; Seravalli L.; Frigeri P.; Bocchi C.; Franchi S. (literal)
Pagina inizio
  • 111 (literal)
Pagina fine
  • 114 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://linkinghub.elsevier.com/retrieve/pii/S0921510708004327 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 165 (literal)
Rivista
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  • In: Materials Science and Engineering B-Solid State Materials for Advanced Technology, vol. 165 (1-2) pp. 111 - 114. Elsevier, 2009. (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 1-2 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Laboratorio de Celdas Solares, IMRE, Universidad de La Habana, Cuba, CNR-IMEM, Parma (literal)
Titolo
  • Electrical and structural characterization of InAs/InGaAs quantum dot structures on GaAs (literal)
Abstract
  • In this work we present the results of an electrical and structural characterization of MBE deposited InAs/ I n0.15 Ga0.85 As QD structures having InAs coverages of 2.0 and 3.0 ML that are, respectively, below and above the expected critical value for QD ripening. The samples have been investigated by atomic force microscopy (AFM), transmission electron microscope (TEM), capacitance-voltage (C-V), and deep level transient spectroscopy (DLTS) techniques. The results obtained by the above techniques are compared and discussed. (literal)
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