A new kind of quasi-ohmic metallization in semi-insulating GaAs: Study of electrical characteristics (Articolo in rivista)

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  • A new kind of quasi-ohmic metallization in semi-insulating GaAs: Study of electrical characteristics (Articolo in rivista) (literal)
Anno
  • 2009-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.nima.2009.03.191 (literal)
Alternative label
  • Dubecky F.; Zatko B.; Hubik P.; Gombia E.; Bohacek P.; Huran J.; Sekacova M. (2009)
    A new kind of quasi-ohmic metallization in semi-insulating GaAs: Study of electrical characteristics
    in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT; ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS, AMSTERDAM (Paesi Bassi)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Dubecky F.; Zatko B.; Hubik P.; Gombia E.; Bohacek P.; Huran J.; Sekacova M. (literal)
Pagina inizio
  • 132 (literal)
Pagina fine
  • 134 (literal)
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  • 10th International Workshop on Radiation Imaging Detectors, Helsinki, FINLAND, JUN 29-JUL 03, 2008 (literal)
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  • http://www.sciencedirect.com/science/article/pii/S016890020900624X (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 607 (literal)
Rivista
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  • In: Nuclear Instruments & Methods in Physics Research Section A-Accelerators Spectrometers Detectors and Associated Equipment, vol. 607 (1) pp. 132 - 134. Radiation Imaging Detectors 2008 - Proceedings of the 10th International Workshop on Radiation Imaging Detectors. ELSEVIER SCIENCE BV, 2009. (literal)
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  • 1 (literal)
Note
  • ISI Web of Science (WOS) (literal)
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  • Slovak Acad Sci, Inst Elect Engn, Bratislava, Slovakia, Slovak Acad Sci, Inst of Physics, Bratislava, Slovakia, CNR-IMEM, Parma (literal)
Titolo
  • A new kind of quasi-ohmic metallization in semi-insulating GaAs: Study of electrical characteristics (literal)
Abstract
  • The present work describes current-voltage (I-V) characteristics of radiation detector structures based on semi-insulating (SI) GaAs obtained with new types of metallizations used to form quasi-ohmic contacts. Three different metals (In, Gd and Mg) having lower work function in comparison with the standard AuGeNi eutectic alloy, were used. These metals are expected to form a band bending at the M-S interface which should give rise to a blocking barrier for holes (\"minority\" carriers in SI GaAs). Such contacts, which could effectively replace standard alloyed N+ \"ohmic\" contact, show an unusual electrical charge transport as deduced from the measured I-V characteristics. Pulse-height spectra of Am-241 radionuclide source detected by the structures are also reported. (literal)
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