AFM and TEM study of hydrogenated sputtered Si/Ge multilayers (Articolo in rivista)

Type
Label
  • AFM and TEM study of hydrogenated sputtered Si/Ge multilayers (Articolo in rivista) (literal)
Anno
  • 2009-01-01T00:00:00+01:00 (literal)
Alternative label
  • Frigeri C., Nasi L., Serényi M., Csik A., Erdélyi Z., Beke D. L. (2009)
    AFM and TEM study of hydrogenated sputtered Si/Ge multilayers
    in Superlattices and microstructures
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Frigeri C., Nasi L., Serényi M., Csik A., Erdélyi Z., Beke D. L. (literal)
Pagina inizio
  • 475 (literal)
Pagina fine
  • 481 (literal)
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  • 45 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
  • In: Superlattices and Microstructures, vol. 54 pp. 475 - 481. Elsevier Ltd, 2009. (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-IMEM, Parma, MTA-MFA Institute, Budapest, Hungary, Institute of Nuclear Research of HAS, Debrecen, Hungary, Department of Solid State Physics, University of Debrecen, Hungary (literal)
Titolo
  • AFM and TEM study of hydrogenated sputtered Si/Ge multilayers (literal)
Abstract
  • Multilayers of hydrogenated ultrathin (3 nm) amorphous a- Si and a-Ge layers prepared by sputtering have been studied by atomic force microscopy (AFM) and transmission electron microscopy (TEM) to check the influence of annealing on their structural stability. The annealed multilayers exhibit surface and bulk degradation with formation of bumps and craters whose density and size increase with increasing hydrogen content and/or annealing temperature and time. Bumps are due to the formation of H2 bubbles in the multilayer. The craters are bumps blown up very likely because of too high a gas pressure inside. The release of H from its bonds to Si and Ge occurs within cavities very likely present in the samples. The necessary energy is supplied by the heat treatment and by the recombination of thermally generated carriers. Results by energy filtered TEM on the interdiffusion of Si and Ge upon annealing are also presented. (literal)
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