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Enhancement of the power factor in two-phase silicon-boron nanocrystalline alloys (Articolo in rivista)

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Enhancement of the power factor in two-phase silicon-boron nanocrystalline alloys (Articolo in rivista) (literal)

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Narducci, D., Lorenzi, B., Zianni, X., Neophytou, N., Frabboni, S., Gazzadi, G.C., Roncaglia, A., Suriano, F. (2014)
Enhancement of the power factor in two-phase silicon-boron nanocrystalline alloys
in Physica status solidi. A, Applications and materials science (Print)
(literal)

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Narducci, D., Lorenzi, B., Zianni, X., Neophytou, N., Frabboni, S., Gazzadi, G.C., Roncaglia, A., Suriano, F. (literal)

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Department of Materials Science, University of Milano Bicocca, Milan, Italy; Department of Aircraft Technologies, Technological Educational Institution of Sterea Ellada, Psachna, Greece; Department of Microelectronics, IAMPPNM, NCSR Demokritos, Athens, Greece; Institute for Microelectronics, TUV, Vienna, Austria; School of Engineering, University of Warwick, Coventry, United Kingdom; Department of FIM, University of Modena and Reggio Emilia, Modena, Italy; CNR-Institute of Nanoscience-S3, Modena, Italy; IMM-CNR, Bologna, Italy (literal)

Titolo

Enhancement of the power factor in two-phase silicon-boron nanocrystalline alloys (literal)

Abstract

In previous publications it was shown that the precipitation of silicon boride around grain boundaries may lead to an increase of the power factor in nanocrystalline silicon. Such an effect was further explained by computational analyses showing that the formation of an interphase at the grain boundaries along with high boron densities can actually lead to a concurrent increase of the electrical conductivity ? and of the Seebeck coefficient S. In this communication we report recent evidence of the key elements ruling such an unexpected effect. Nanocrystalline silicon films deposited onto a variety of substrates were doped to nominal boron densities in excess of 1020 cm-3 and were annealed up to 1000 C to promote boride precipitation. Thermoelectric properties were measured and compared with their microstructure. A concurrent increase of ? and S with the carrier density was found only upon formation of an interphase. Its dependency on the film microstructure and on the deposition and processing conditions will be discussed. (literal)

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