High temperature properties of CdTe crystals doped by Sb (Articolo in rivista)

Type
Label
  • High temperature properties of CdTe crystals doped by Sb (Articolo in rivista) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Alternative label
  • Fochuk P., Grill R., Nykonyuk Ye., Krustok J., Armani N., Zakharuk Z., Grossberg M., Panchuk O. (2007)
    High temperature properties of CdTe crystals doped by Sb
    in IEEE transactions on nuclear science
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Fochuk P., Grill R., Nykonyuk Ye., Krustok J., Armani N., Zakharuk Z., Grossberg M., Panchuk O. (literal)
Pagina inizio
  • 763 (literal)
Pagina fine
  • 768 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 54 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Titolo
  • High temperature properties of CdTe crystals doped by Sb (literal)
Abstract
  • Electrical properties of CdTe single crystals doped by Sb were studied in situ at high temperature point defect equilibrium under well defined Cd and Te vapour pressure. Up to similar to 700-800 K samples revealed p-type conductivity both under Cd and Te saturation. The position of the deep acceptor level E-alpha = E-v + 0.28 eV was determined using hole density temperature dependency at 350-650 K. The point defects responsible for hole density are supposed to be Sb-Te acceptors. The n-type conductivity above similar to 700-800 K is determined by intrinsic point defects: electrons under Te saturation due to native disorder and Cd interstitials under Cd saturation. (literal)
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