Atomic and electronic structure of the cleaved 6H-SiC(11-20) surface (Articolo in rivista)

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Label
  • Atomic and electronic structure of the cleaved 6H-SiC(11-20) surface (Articolo in rivista) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Alternative label
  • Bertelli M., Homoth J., Wenderoth M., Rizzi A., Ulbrich R.G., Righi M.C., Bertoni C.M. , Catellani A. (2007)
    Atomic and electronic structure of the cleaved 6H-SiC(11-20) surface
    (literal)
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  • Bertelli M., Homoth J., Wenderoth M., Rizzi A., Ulbrich R.G., Righi M.C., Bertoni C.M. , Catellani A. (literal)
Pagina inizio
  • 165312 (literal)
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  • 75 (literal)
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  • L’articolo e’ frutto di un lavoro congiunto sperimentale e teorico su superfici non-polari di carburo di silicio di potenziale interesse per la crescita di nitruri di elevata qualita’ elettronica. Il lavoro offre inoltre uno spunto metodologico sulla interpretazione di misure STM/STS. (literal)
Note
  • ISI Web of Science (WOS) (literal)
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  • Ulbrich R.G. - IV. Physikalisches Institut and Virtual Institute of Spin Electronics (VISel), Georg-August Universitaet Goettingen, D-37077 Goettingen, Germany Bertoni C.M. - CNR-INFM National Center on nanoStructures and bioSystems at Surfaces (S3) and Dipartimento di Fisica, Universita’ di Modena e Reggio Emilia, I-41100 Modena, Italy Catellani A. - CNR-IMEM, Parco Area delle Scienze, 37A, I-43010 Parma, and S3, Italy (literal)
Titolo
  • Atomic and electronic structure of the cleaved 6H-SiC(11-20) surface (literal)
Abstract
  • We present a combined cross-section Scanning Tunnelling Microscopy-Spectroscopy (X-STM/STS) and ab initio simulations study of the non-polar (11-20) cleaved surface of 6H-SiC. The experimental results show an unreconstructed surface in agreement with theory. Upon truncation, two surface bands appear inside the semiconductor bandgap: one empty band localized on the Si-atoms and one filled band on the C-atoms. According to the STS experimental results on n-doped samples, the Fermi energy is pinned at the surface inside the bandgap. By comparison of STM filled and empty states topographies we propose that on the fresh cleaved surface the Fermi level lies at the bottom of the Si-like band. The calculated STM images reproduce very well the experimental contrast of the 6H stacking sequence and its bias dependence. (literal)
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